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| Part Number | 2SB1470 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SB1470 |
| Manufacturer | INCHANGE |
| Title | PNP Transistor |
| Description | ·High forward current transfer ratio hFE ·Low collector to emitter saturation voltage VCE(sat) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplification ·Optimum for 120W HiFi output applications. ABSOLUTE MAXIMUM RATINGS(Ta=2. |
| Features | -Emitter Breakdown Voltage IC= -30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -7A; IB= -7mA VBE(sat) Base-Emitter Saturation Voltage IC= -7A; IB= -7mA ICBO Collector Cutoff Current VCB= -160V; IE= 0 ICEO Collector Cutoff Current VCE= -160V; IB= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gain IC= -1A; VCE= -5V hFE-2 DC Current Gain IC= -7A; VCE=. |
| Part Number | 2SB1470 |
| Manufacturer | Panasonic Semiconductor |
| Title | Silicon PNP Transistor |
| Description | Power Transistors 2SB1470 Silicon PNP triple diffusion planar type darlington Unit: mm (10.0) (6.0) (2.0) (4.0) For power amplification Complementary to 2SD2222 ■ Features • Optimum for 120 W HiFi output • High forward current transfer ratio hFE • Low collector-emitter saturation voltage VCE(sat) . |
| Features |
• Optimum for 120 W HiFi output • High forward current transfer ratio hFE • Low collector-emitter saturation voltage VCE(sat) 26.0±0.5 20.0±0.5 φ 3.3±0.2 5.0±0.3 (3.0) (3.0) (1.5) (1.5) 2.0±0.3 3.0±0.3 1.0±0.2 0.6±0.2 5.45±0.3 (1.5) 2.7±0.3 ■ Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collecto. |
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