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| Part Number | 2SB1431 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SB1431 |
| Manufacturer | INCHANGE |
| Title | PNP Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High DC Current Gain- : hFE= 2000(Min)@ (VCE= -2V, IC= -3A) ·Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max)@ (IC= -3A, IB= -3mA) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·D. |
| Features | er Transistor 2SB1431 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -3mA VBE(sat) Base-Emitter Saturation Voltage IC= -3A; IB= -3mA ICBO Collector Cutoff Current VCB= -100V; IE= 0 hFE-1 DC Current Gain IC= -3A; VCE= -2V hFE-2 DC Current Gain IC= -5A; VCE= -2V fT Current-Gain—Ba. |
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| 1 | 2SB1430 |
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| 2 | 2SB1430 |
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| 8 | 2SB1436 |
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Desde 2024. D4U Semiconductor.
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