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2SB1431 |
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| Part Number | 2SB1431 |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High DC Current Gain- : hFE= 2000(Min)@ (VCE= -2V, IC= -3A) ·Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max)@ (IC= -3A, IB= -3mA)... |
| Features |
er Transistor
2SB1431
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -3mA
VBE(sat) Base-Emitter Saturation Voltage
IC= -3A; IB= -3mA
ICBO
Collector Cutoff Current
VCB= -100V; IE= 0
hFE-1
DC Current Gain
IC= -3A; VCE= -2V
hFE-2
DC Current Gain
IC= -5A; VCE= -2V
fT
Current-Gain—Bandwidth Product IC= -0.8A; VCE= -5V
COB
Output Capacitance
IE= 0; VCB= -10V; ftest= 1MHz
Switching Times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= -3A, IB1= -IB2= -3mA, VCC≈ -50V;... |
| Document |
 2SB1431 Data Sheet
PDF 232.58KB |
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Desde 2024. D4U Semiconductor.
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