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2SB1371 |
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| Part Number | 2SB1371 |
| Manufacturer | Panasonic Semiconductor |
| Description | Power Transistors 2SB1371 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD2064 Unit: mm q q q q 16.2±0.5 12.5 3.5 Solder Dip Satisfactory foward current transfer ratio hFE vs. collector current IC characteristics Wide area of safe operation (ASO) High transition frequency fT Full-pack package which can be instal. |
| Features |
15.0±0.3 11.0±0.2
5.0±0.2 3.2
21.0±0.5 15.0±0.2
φ3.2±0.1
2.0±0.2
2.0±0.1 0.6±0.2
1.1±0.1 5.45±0.3 10.9±0.5 1 2 3
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
1:Base 2:Collector 3:Emitter TOP –3 Full Pack Package(a) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current (TC=25˚C) Symbol ICBO IEBO hFE1 hFE2 * hFE3 VBE VCE(. |
| Datasheet |
 2SB1371 Data Sheet
PDF 51.53KB |
| Distributor | Stock | Price | Buy |
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2SB1371 |
| Part Number | 2SB1371 |
| Manufacturer | SavantIC |
| Title | SILICON POWER TRANSISTOR |
| Description | ·With TO-3PFa package ·Complement to type 2SD2064 ·High transition frequency ·Satisfactory linearity of hFE APPLICATIONS ·For high power amplification PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION 2SB1371 Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base. |
| Features | t gain DC current gain Output capacitance Transition frequency CONDITIONS IC=-4A ;IB=-0.4A IC=-4A ; VCE=-5V VCB=-120V; IE=0 VEB=-3V; IC=0 IC=-20mA ; VCE=-5V IC=-1A ; VCE=-5V IC=-4A ; VCE=-5V IE=0 ; VCB=-10V;f=1.0MHz IC=-0.5A ; VCE=-5V;f=1.0MHz 20 60 20 MIN 2SB1371 SYMBOL VCEsat VBE ICBO IEBO hFE-1 hFE -2 hFE -3 COB fT TYP. MAX -2.0 -1.8 -50 -50 UNIT V V µA µA 200 150 15 pF MHz hFE-2 class. |
2SB1371 |
| Part Number | 2SB1371 |
| Manufacturer | INCHANGE |
| Title | PNP Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SD2064 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power amplifications. ABSOLUTE MAXIMUM RAT. |
| Features | tion Voltage IC= -4A; IB= -0.4A VBE(on) Base -Emitter On Voltage IC= -4A; VCE= -5V ICBO Collector Cutoff Current VCB= -120V; IE= 0 IEBO Emitter Cutoff Current VEB= -3V; IC= 0 hFE-1 DC Current Gain IC= -20mA; VCE= -5V hFE-2 DC Current Gain IC= -1A; VCE= -5V hFE-3 DC Current Gain IC= -4A; VCE= -5V fT Current-Gain—Bandwidth Product IC= -0.5A; VCE= -5 V; f= 1MHz COB Output Capacit. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SB1370 |
Rohm |
Power Transistor |
|
| 2 | 2SB1370 |
INCHANGE |
PNP Transistor |
|
| 3 | 2SB1370 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 4 | 2SB1370 |
LGE |
PNP Transistors |
|
| 5 | 2SB1370 |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor |
|
| 6 | 2SB1372 |
INCHANGE |
PNP Transistor |
|
| 7 | 2SB1373 |
INCHANGE |
PNP Transistor |
|
| 8 | 2SB1373 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 9 | 2SB1375 |
Toshiba Semiconductor |
Silicon PNP Transistor |
|
| 10 | 2SB1375 |
INCHANGE |
PNP Transistor |
|
Desde 2024. D4U Semiconductor.
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