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2SB1370 |
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| Part Number | 2SB1370 |
| Manufacturer | ROHM (https://www.rohm.com/) |
| Description | . |
| Features | . |
| Datasheet |
 2SB1370 Data Sheet
PDF 136.69KB |
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2SB1370 |
| Part Number | 2SB1370 |
| Manufacturer | INCHANGE |
| Title | PNP Transistor |
| Description | ·Low Collector Saturation Voltage- : VCE(sat)= -0.3V(Typ.)@IC= -2A ·Good Linearity of hFE ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBO. |
| Features | B= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= -50μA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -50μA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A VBE(sat) Base-Emitter Saturation Voltage IC= -2A; IB= -0.2A ICBO Collector Cutoff Current VCB= -60V; IE= 0 IEBO Emitter Cutoff Current VEB= -4V; IC= 0 hFE DC Current Gain IC= -0.5A; VCE= -5V fT Cu. |
2SB1370 |
| Part Number | 2SB1370 |
| Manufacturer | SavantIC |
| Title | SILICON POWER TRANSISTOR |
| Description | ·With TO-220Fa package ·PC=2W(Ta=25 ) /30W(TC=25 ) ·Low collector saturation voltage ·Wide area of safe operation PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector -emitter voltage Emitter-b. |
| Features | Collector cut-off current Emitter cut-off current DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-1mA; IB=0 IC=-50µA; IE=0 IE=-50µA; IC=0 IC=-2A ;IB=-0.2A IC=-2A; IB=-0.2A VCB=-60V; IE=0 VEB=-4V; IC=0 IC=-0.5A ; VCE=-5V IC=-0.5A; VCE=-5V f=1MHz ; VCB=10V 100 MIN -60 -60 -5 2SB1370 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE fT COB TYP. MAX UN. |
2SB1370 |
| Part Number | 2SB1370 |
| Manufacturer | LGE |
| Title | PNP Transistors |
| Description | 2SB1370(PNP) TO-220F Bipolar Transistors TO-220F 1. BASE 2. COLLECTOR 123 3. EMITTE Features Breakdown Voltage High Reverse Cut-off Current Small Saturation Voltage Low Collector Power dissipation PCM : 2 W (Tamb=25℃) 30 W (Tcase=25℃) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol P. |
| Features | Breakdown Voltage High Reverse Cut-off Current Small Saturation Voltage Low Collector Power dissipation PCM : 2 W (Tamb=25℃) 30 W (Tcase=25℃) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current -Continuous TJ Junction temperature Tstg Storage temperature Dimensions in. |
2SB1370 |
| Part Number | 2SB1370 |
| Manufacturer | BLUE ROCKET ELECTRONICS |
| Title | Silicon PNP transistor |
| Description | TO-220F PNP 。Silicon PNP transistor in a TO-220F Plastic Package. / Features ,。 Low saturation voltage, excellent DC current gain characteristics. / Applications 。 Audio frequency power amplifier applications. / Equivalent Circuit / Pinning 1 23 PIN1：Base PIN 2：Collector PIN 3：Emitter /. |
| Features | ,。 Low saturation voltage, excellent DC current gain characteristics. / Applications 。 Audio frequency power amplifier applications. / Equivalent Circuit / Pinning 1 23 PIN1：Base PIN 2：Collector PIN 3：Emitter / hFE Classifications & Marking hFE Classifications Symbol hFE Range E 100～200 F 160～320 http://www.fsbrec.com 1/6 2SB1370(BR3CA1370F) Rev.C Feb.-2015 DATA SHEET / Absolute . |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SB1371 |
Panasonic Semiconductor |
Silicon PNP Transistor |
|
| 2 | 2SB1371 |
INCHANGE |
PNP Transistor |
|
| 3 | 2SB1371 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 4 | 2SB1372 |
INCHANGE |
PNP Transistor |
|
| 5 | 2SB1373 |
INCHANGE |
PNP Transistor |
|
| 6 | 2SB1373 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 7 | 2SB1375 |
Toshiba Semiconductor |
Silicon PNP Transistor |
|
| 8 | 2SB1375 |
INCHANGE |
PNP Transistor |
|
| 9 | 2SB1375 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 10 | 2SB1375 |
GME |
Silicon PNP Transistor |
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Desde 2024. D4U Semiconductor.
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