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| Part Number | 2SB1283 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SB1283 |
| Manufacturer | INCHANGE |
| Title | PNP Transistor |
| Description | ·High DC Current Gain- : hFE= 1500(Min.)@IC= -3A ·Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max)@IC= -3A ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High power switching applications. ·Hammer drive, pulse motor dr. |
| Features | otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -5mA VBE(sat) Base-Emitter Saturation Voltage IC= -3A; IB= -5mA ICBO Collector Cutoff Current VCB= -100V; IE= 0 ICEO Collector Cutoff Current VCE= -100V; RBE= ∞ IEBO Emitter Cutoff Current VEB= -7V; IC= 0 hFE DC . |
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Desde 2024. D4U Semiconductor.
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