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2SB1283 |
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| Part Number | 2SB1283 |
| Manufacturer | INCHANGE |
| Description | ·High DC Current Gain- : hFE= 1500(Min.)@IC= -3A ·Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max)@IC= -3A ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance a... |
| Features |
otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -5mA
VBE(sat) Base-Emitter Saturation Voltage
IC= -3A; IB= -5mA
ICBO
Collector Cutoff Current
VCB= -100V; IE= 0
ICEO
Collector Cutoff Current
VCE= -100V; RBE= ∞
IEBO
Emitter Cutoff Current
VEB= -7V; IC= 0
hFE
DC Current Gain
IC= -3A; VCE= -3V
fT
Current-Gain—Bandwidth Product
IC= -0.7A; VCE= -10V
Switching Times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= -3.0A ,IB1= -IB2= -5mA, VCC≈ -40V;... |
| Document |
 2SB1283 Data Sheet
PDF 204.56KB |
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Desde 2024. D4U Semiconductor.
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