2SB1231 Datasheet. existencias, precio

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2SB1231 Epitaxial Planar Silicon Transistor


2SB1231
Part Number 2SB1231
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INCHANGE
2SB1231
Part Number 2SB1231
Manufacturer INCHANGE
Title PNP Transistor
Description ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High Current Capability ·Wide Area of Safe Operation ·Complement to Type 2SD1841 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for motor drivers, converters and other general H.
Features otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -5mA ; RBE=∞ V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -10A; IB= -1A VBE(sat) Base -Emitter Saturation Voltage IC= -10A; IB= -1A ICBO Collector Cutoff Current VCB= -1.

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