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2SB1231 |
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| Part Number | 2SB1231 |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High Current Capability ·Wide Area of Safe Operation ·Complement to Type 2SD1841 ·Minimum Lot-to-Lot variations for robust device performa... |
| Features |
otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -5mA ; RBE=∞
V(BR)CBO Collector-Base Breakdown Voltage
IC= -1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -10A; IB= -1A
VBE(sat) Base -Emitter Saturation Voltage
IC= -10A; IB= -1A
ICBO
Collector Cutoff Current
VCB= -100V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1
DC Current Gain
IC= -2.5A; VCE= -2V
hFE-2
DC Current Gain
IC= -10A; VCE= -2V
hFE-1 Classifications P Q 50-100 70-140 2SB123... |
| Document |
 2SB1231 Data Sheet
PDF 216.46KB |
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Desde 2024. D4U Semiconductor.
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