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| Part Number | 2SB1106 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SB1106 |
| Manufacturer | INCHANGE |
| Title | PNP Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·High DC Current Gain- : hFE=1000(Min)@ (VCE= -3V, IC= -3A) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifiers applications. ABSOLUTE MAXIMUM RATI. |
| Features | BR)EBO Emitter-Base Breakdown Voltage IE= -5mA; IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -3A; IB= -6mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -6A; IB= -60mA VBE(sat)-1 Base-Emitter Saturation Voltage IC= -3A; IB= -6mA VBE(sat)-2 Base-Emitter Saturation Voltage IC= -6A; IB= -60mA ICBO Collector Cutoff Current VCB= -120V; IE= 0 ICEO Collector Cutoff Current . |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SB1100 |
Inchange Semiconductor |
Silicon PNP Power Transistors |
|
| 2 | 2SB1101 |
Hitachi Semiconductor |
PNP Transistor |
|
| 3 | 2SB1101 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 4 | 2SB1101 |
INCHANGE |
PNP Transistor |
|
| 5 | 2SB1102 |
Hitachi Semiconductor |
PNP Transistor |
|
| 6 | 2SB1102 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 7 | 2SB1102 |
INCHANGE |
PNP Transistor |
|
| 8 | 2SB1103 |
Hitachi Semiconductor |
PNP Transistor |
|
| 9 | 2SB1103 |
INCHANGE |
PNP Transistor |
|
| 10 | 2SB1103 |
SavantIC |
SILICON POWER TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
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