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2SB1106 |
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| Part Number | 2SB1106 |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·High DC Current Gain- : hFE=1000(Min)@ (VCE= -3V, IC= -3A) ·Minimum Lot-to-Lot variations for robust device performance and reliable opera... |
| Features |
BR)EBO Emitter-Base Breakdown Voltage
IE= -5mA; IC= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -3A; IB= -6mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -6A; IB= -60mA
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= -3A; IB= -6mA
VBE(sat)-2 Base-Emitter Saturation Voltage
IC= -6A; IB= -60mA
ICBO
Collector Cutoff Current
VCB= -120V; IE= 0
ICEO
Collector Cutoff Current
VCE= -100V; RBE= ∞
hFE
DC Current Gain
IC= -3A; VCE= -3V
VECF
C-E Diode Forward Voltage
IF= 6A
Switching Times
ton
Turn-on Time
tstg
Storage Time
IC= -3A, IB1= -IB2= -6mA
tf
Fall Time
... |
| Document |
 2SB1106 Data Sheet
PDF 209.95KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SB1100 |
Inchange Semiconductor |
Silicon PNP Power Transistors |
|
| 2 | 2SB1101 |
Hitachi Semiconductor |
PNP Transistor |
|
| 3 | 2SB1101 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 4 | 2SB1101 |
INCHANGE |
PNP Transistor |
|
| 5 | 2SB1102 |
Hitachi Semiconductor |
PNP Transistor |
|
| 6 | 2SB1102 |
SavantIC |
SILICON POWER TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
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