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| Part Number | 2SB1032 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SB1032 |
| Manufacturer | INCHANGE |
| Title | PNP Transistor |
| Description | ·High DC Current Gain- : hFE = 1000(Min)@ IC= -5A ·Collector-Emitter Sustaining Voltage- : = V(BR)CEO -120V(Min) ·Complement to Type 2SD1436 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications. ABS. |
| Features | n Voltage IC= -25mA, RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= -5mA , IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -5A ,IB= -10mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -10A ,IB= -100mA VBE(sat)-1 Base-Emitter Saturation Voltage IC= -5A ,IB= -10mA VBE(sat)-2 Base-Emitter Saturation Voltage IC= -15A ,IB= -100mA ICBO Collector Cutoff current ICEO Collec. |
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Desde 2024. D4U Semiconductor.
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