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2SB1032 |
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| Part Number | 2SB1032 |
| Manufacturer | Hitachi Semiconductor |
| Description | 2SB1032(K) Silicon PNP Triple Diffused Application Power switching complementary pair with 2SD1436(K) Outline TO-3P 2 1 1. Base 2. Collector (Flange) 3. Emitter ID 1.0 kΩ (Typ) 200 Ω (Typ) 3 1 2... |
| Features |
10 A, IB = –0.1 A*1 I C = –5 A, IB = –10 mA*1 I C = –10 A, IB = –0.1 A*1 I D = 10 A*1 VCC = –30 V, I C = –5 A, IB1 = –IB2 = –10 mA Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage C to E diode forward voltage Turn on time Turn off time Note: 1. Pulse test hFE VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 VD t on t off 2 2SB1032(K) Maximum Collector Dissipation Curve 100 Collector power dissipation Pc (W) –30 –10 –3 DC A... |
| Document |
 2SB1032 Data Sheet
PDF 36.61KB |
Similar Datasheet
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|---|---|---|---|---|
| 1 | 2SB1030 |
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| 2 | 2SB1030A |
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| 3 | 2SB1031 |
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| 4 | 2SB1031 |
INCHANGE |
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| 5 | 2SB1031K |
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| 6 | 2SB1032 |
INCHANGE |
PNP Transistor |
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