Busque con el número de pieza junto con el fabricante o la descripción
| Part Number | 2SB1023 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SB1023 |
| Manufacturer | INCHANGE |
| Title | PNP Transistor |
| Description | ·High DC C urrent Gain- : hFE= 2000(Min.)@IC= -1A ·Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max)@IC= -2A ·Good Linearity of hFE ·Complement to Type 2SD1413 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications. ·Hammer dr. |
| Features | Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -4mA VBE(sat) Base-Emitter Saturation Voltage IC= -2A; IB= -4mA ICBO Collector Cutoff Current VCB= -60V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC. |
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|---|---|---|---|---|
| 1 | 2SB1020 |
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| 2 | 2SB1020A |
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| 3 | 2SB1021 |
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| 4 | 2SB1021 |
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| 5 | 2SB1022 |
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| 6 | 2SB1022 |
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| 7 | 2SB1024 |
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| 8 | 2SB1024 |
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| 9 | 2SB1024 |
INCHANGE |
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| 10 | 2SB1025 |
Hitachi Semiconductor |
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Desde 2024. D4U Semiconductor.
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