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2SB1023 |
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| Part Number | 2SB1023 |
| Manufacturer | INCHANGE |
| Description | ·High DC C urrent Gain- : hFE= 2000(Min.)@IC= -1A ·Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max)@IC= -2A ·Good Linearity of hFE ·Complement to Type 2SD1413 ·Minimum Lot-to-Lot variations fo... |
| Features |
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -4mA
VBE(sat) Base-Emitter Saturation Voltage
IC= -2A; IB= -4mA
ICBO
Collector Cutoff Current
VCB= -60V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1
DC Current Gain
IC= -1A; VCE= -2V
hFE-2
DC Current Gain
IC= -3A; VCE= -2V
2SB1023
MIN TYP. MAX UNIT
-40
V
-1.5
V
-2.0
V
-20 μA
-2.5 mA
2000
1000
NOTICE： ISC reserves the rights to make ... |
| Document |
 2SB1023 Data Sheet
PDF 209.49KB |
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