Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
|---|
2N7002KDW |
| Part Number | 2N7002KDW |
| Manufacturer | JCET |
| Title | N-channel MOSFET |
| Description | SOT-363 parts are shipped in tape. The carrier tape is made from a dissipative (carbon filled) polycarbonate resin. The cover tape is a multilayer film (Heat Activated Adhesive in nature) primarily composed of polyester film, adhesive layer, sealant, and anti-static sprayed agent. These reeled part. |
| Features | z High density cell design for Low RDS（on） z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability z ESD protected MARKING APPLICATION z Load Switch for Portable Devices z DC/DC Converter Equivalent Circuit 72K MOSFET MAXIMUM RATINGS (Ta = 25°C unless otherwise noted) Symbol Parameter Value Unit VDS Drain-Source voltage 60 V VGS Gate-Source . |
2N7002KDW |
| Part Number | 2N7002KDW |
| Manufacturer | SeCoS |
| Title | Dual N-Channel MOSFET |
| Description | Elektronische Bauelemente 2N7002KDW 115mA, 60V Dual N-Channel Small Signal MOSFET FEATURES Low on-resistance Fast switching Speed Low-voltage drive Easily designed drive circuits ESD protected:2000V RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free MECHANICAL DATA . |
| Features |
Low on-resistance Fast switching Speed Low-voltage drive Easily designed drive circuits ESD protected:2000V RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free MECHANICAL DATA Case: SOT-363 Case Material-UL flammability rating 94V-0 Terminals: Solderable per MIL-STD-202, Method 208 Weight: 0.006 grams(approx.) DEVICE MARKING: RK 6 54 D2 G1 S1 S2 G2 D1 1 23 S. |
2N7002KDW |
| Part Number | 2N7002KDW |
| Manufacturer | Pan Jit International |
| Title | N-Channel MOSFET |
| Description | 2N7002KDW 60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), [email protected],IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition • Specially Designed for B. |
| Features |
• RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), [email protected],IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition • Specially Designed for Battery Operated Systems, Solid-State Relays Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc. • ESD Protected 2KV HBM • Component are in compliance with EU RoHS 2. |
2N7002KDW |
| Part Number | 2N7002KDW |
| Manufacturer | MCC |
| Title | Dual N-Channel MOSFET |
| Description | Features +LJK'HQVLW&HOO'HVLJQ)RU/RZ5'6 21 9ROWDJH&RQWUROOHG6PDOO6LJQDO6ZLWFK +LJK6DWXUDWLRQ&XUUHQW&DSDELOLW (SR[0HHWV8/ 9)ODPPDELOLW5DWLQJ 0RLVWXUH6HQVLWLYLW/HYHO +DORJHQ)UHH$YDLODEOH8SRQ5HTXHVW%$GGLQJ6XIIL[+) /HDG)UHH)LQLVK5R+6&RPSOLDQW 36. |
| Features | +LJK'HQVLW&HOO'HVLJQ)RU/RZ5'6 21 9ROWDJH&RQWUROOHG6PDOO6LJQDO6ZLWFK +LJK6DWXUDWLRQ&XUUHQW&DSDELOLW (SR[0HHWV8/ 9)ODPPDELOLW5DWLQJ 0RLVWXUH6HQVLWLYLW/HYHO +DORJHQ)UHH$YDLODEOH8SRQ5HTXHVW%$GGLQJ6XIIL[+) /HDG)UHH)LQLVK5R+6&RPSOLDQW 36XIIL['HVLJQDWHV5R+6 &RPSOLDQW6HH2UGHULQJ,QIRUPDWLRQ 1.': '8$/ 1&+$11(/ 026)(7 Maximum Ratings. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2N7002KDW-AU |
Pan Jit International |
N-channel MOSFET |
|
| 2 | 2N7002KDWS |
TAITRON |
Double N-Channel MOSFET |
|
| 3 | 2N7002K |
DIODES |
N-CHANNEL ENHANCEMENT MODE MOSFET |
|
| 4 | 2N7002K |
Kexin |
N-channel MOSFET |
|
| 5 | 2N7002K |
HOTTECH |
N-Channel MOSFET |
|
| 6 | 2N7002K |
MCC |
N-Channel MOSFET |
|
| 7 | 2N7002K |
WEITRON |
N-Channel Enhancement Mode Power MOSFET |
|
| 8 | 2N7002K |
Vishay Siliconix |
N-channel MOSFET |
|
| 9 | 2N7002K |
ON Semiconductor |
Small-Signal MOSFET |
|
| 10 | 2N7002K |
Fairchild Semiconductor |
N-channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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