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2N7002K |
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| Part Number | 2N7002K |
| Manufacturer | WEITRON |
| Description | * Gate Pretection Diode SOURCE 2 The 2N7002K utilized advanced processing techniques to achieve the lowest possible on-resistance, extr nt and cost-e ectiveness device. The 2N7002K is universally used for all commercialindustrial applications. Features: *Simple Drive Requirement *Small Package Outline 2N7002K DRAIN CURRENT 640m AMPERES DRAIN SOURCE VOL. |
| Features |
*Simple Drive Requirement *Small Package Outline 2N7002K DRAIN CURRENT 640m AMPERES DRAIN SOURCE VOLTAGE 60 VOLTAGE 1 2 3 SOT-23 Maximum Ratings(TA=25℃ Unless Otherwise Specified) Rating Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3,V GS @10V(TA ,V GS @10V(TA Pulsed Drain Current1, 2 Tota l Po wer Dis s ipation(TA=25˚C ) Maximum Junction-ambient 3 Operating Junction Temperature Range Storage Temperature Range VDS VGS ID I DM PD R θJA TJ Tstg Gate−Source ESD Rating (HBM, Method 3015) ESD Value 60 ±20 640 500 950 1.38 90 +150 -55~+150 2500 Unit V mA W ˚C. |
| Datasheet |
 2N7002K Data Sheet
PDF 788.88KB |
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2N7002K |
| Part Number | 2N7002K |
| Manufacturer | Kexin |
| Title | N-channel MOSFET |
| Description | SMD Type MOSFET N-Channel Enhancement MOSFET 2N7002K Features Low On-Resistance: RDS(ON) Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ƽ ESD Protected 2KV HBM Absolute Maximum Ratings Ta=25 Parameter Drain-Source Voltage Gate-Source Voltage -Con. |
| Features | Low On-Resistance: RDS(ON) Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ƽ ESD Protected 2KV HBM Absolute Maximum Ratings Ta=25 Parameter Drain-Source Voltage Gate-Source Voltage -Continuous Drain Current -Continuous ( Note:1) -Pulsed Power Dissipation (Note 1) Thermal Resistance.Junction- to-Ambient Junction Temperature Junction and Storage. |
2N7002K |
| Part Number | 2N7002K |
| Manufacturer | Vishay Siliconix |
| Title | N-channel MOSFET |
| Description | www.vishay.com 2N7002K Vishay Siliconix N-Channel 60 V (D-S) MOSFET SOT-23 (TO-236) D 3 Marking code: 7K 1 G Top View PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V Qg typ. (nC) ID (mA) Configuration 2 S 60 2 0.4 300 Single FEATURES • Low on-resistance: 2 • Low threshold: 2 V (ty. |
| Features |
• Low on-resistance: 2 • Low threshold: 2 V (typ.) • Low input capacitance: 25 pF Available • Fast switching speed: 25 ns Available • Low input and output leakage • TrenchFET® power MOSFET Available • 2000 V ESD protection • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoHS-com. |
2N7002K |
| Part Number | 2N7002K |
| Manufacturer | Pan Jit International |
| Title | N-channel MOSFET |
| Description | 2N7002K 60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), [email protected],IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition • Specially Designed for Bat. |
| Features |
• RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), [email protected],IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition • Specially Designed for Battery Operated Systems, Solid-State Relays Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc. • ESD Protected 2KV HBM • In compliance with EU RoHS 2002/95/EC dire. |
2N7002K |
| Part Number | 2N7002K |
| Manufacturer | AUK |
| Title | N-channel MOSFET |
| Description | 2N7002K N-Channel Enhancement Mode MOSFET High Speed Switching Application Features ESD rating: 1000V (HBM) Low On-Resistance: RDS(on) < 3Ω @ VGS = 10V High power and current handling capability Very fast switching RoHS compliant device Applications High speed line driver SOT-23 Ord. |
| Features | ESD rating: 1000V (HBM) Low On-Resistance: RDS(on) < 3Ω @ VGS = 10V High power and current handling capability Very fast switching RoHS compliant device Applications High speed line driver SOT-23 Ordering Information Part Number Marking Code Package Packaging 2N7002K 7K2 □ SOT-23 Tape & Reel Marking Information 7K2 □ 7K2 = Specific Device Code □ = Year & Week Code Marking . |
2N7002K |
| Part Number | 2N7002K |
| Manufacturer | MCC |
| Title | N-Channel MOSFET |
| Description | Features • Voltage Controlled Small Signal Switch • ESD Protected Up To 2KV (HBM) • Moisture Sensitivity Level 1 • Halogen Free. “Green” Device (Note1) • Epoxy Meets UL 94 V-0 Flammability Rating • Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) Maxi. |
| Features |
• Voltage Controlled Small Signal Switch • ESD Protected Up To 2KV (HBM) • Moisture Sensitivity Level 1 • Halogen Free. “Green” Device (Note1) • Epoxy Meets UL 94 V-0 Flammability Rating • Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) Maximum Ratings • Operating Junction Temperature Range: -55°C to +150°C • Storage Temperature: -55°C to +150°C •. |
2N7002K |
| Part Number | 2N7002K |
| Manufacturer | Fairchild Semiconductor |
| Title | N-channel MOSFET |
| Description | 2N7002K — N-Channel Enhancement Mode Field Effect Transistor September 2014 2N7002K N-Channel Enhancement Mode Field Effect Transistor Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input / Output Leakage • Ultra-Small Surface Mount . |
| Features |
• Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input / Output Leakage • Ultra-Small Surface Mount Package • Pb Free / RoHS Compliant • ESD HBM = 2000 V (Typical: 3000 V) as per JESD22 A114 and ESD CDM = 2000 V as per JESD22 C101 D D G SOT 23 Marking: 7K S Ordering Information Part Number 2N7002K Top Mark 7K GS Package SOT-23 3L Packing. |
2N7002K |
| Part Number | 2N7002K |
| Manufacturer | Philips |
| Title | N-channel MOSFET |
| Description | N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features s Logic level compatible s Very fast switching s Subminiature surface mount package s Gate-source ESD protection diodes. 1.3 Applications s Relay driver s High speed line driver. 1. |
| Features | s Logic level compatible s Very fast switching s Subminiature surface mount package s Gate-source ESD protection diodes. 1.3 Applications s Relay driver s High speed line driver. 1.4 Quick reference data s VDS ≤ 60 V s Ptot ≤ 0.83 W s ID ≤ 340 mA s RDSon ≤ 3.9 Ω. 2. Pinning information Table 1: Pin 1 2 3 Pinning - SOT23, simplified outline and symbol Description Simplified outline gate . |
2N7002K |
| Part Number | 2N7002K |
| Manufacturer | HOTTECH |
| Title | N-Channel MOSFET |
| Description | Plastic-Encapsulate Mosfets FEATURES High density cell design for low RDS(ON) Voltage controlled small signal switch. Rugged and reliable. High saturation current capability. MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol VDS VDGR VGS ID IDM (1) PTOT Rthj- amb Parameter Drain-source volt. |
| Features | High density cell design for low RDS(ON) Voltage controlled small signal switch. Rugged and reliable. High saturation current capability. MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol VDS VDGR VGS ID IDM (1) PTOT Rthj- amb Parameter Drain-source voltage (VGSm=et0) Drain-gate voltage (RGS =e2r0 kΩ) Gate- source voltage Drain current (continuous) at TC = 25°C Drain current (pulsed) Total. |
2N7002K |
| Part Number | 2N7002K |
| Manufacturer | ON Semiconductor |
| Title | Small-Signal MOSFET |
| Description | DATA SHEET www.onsemi.com Small Signal MOSFET 60 V, 380 mA, Single, N−Channel, SOT−23 2N7002K, 2V7002K Features • ESD Protected • Low RDS(on) • Surface Mount Package • 2V Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP. |
| Features |
• ESD Protected • Low RDS(on) • Surface Mount Package • 2V Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Low Side Load Switch • Level Shift Circuits • DC−DC Converter • Portable Applications i.e. DSC, PDA, Cell Phone, et. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2N7002 |
Fairchild Semiconductor |
N-channel FET |
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| 2 | 2N7002 |
GME |
N-Channel Power Mosfet |
|
| 3 | 2N7002 |
nexperia |
300mA N-channel MOSFET |
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| 4 | 2N7002 |
MCC |
N-Channel MOSFET |
|
| 5 | 2N7002 |
Microchip |
N-channel MOSFET |
|
| 6 | 2N7002 |
Rectron |
N-Channel Enhancement Mode Power MOSFET |
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| 7 | 2N7002 |
ST Microelectronics |
N-Channel MOSFET |
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| 8 | 2N7002 |
Central Semiconductor |
SILICON N-CHANNEL MOSFET |
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| 9 | 2N7002 |
Philips |
N-channel vertical D-MOS transistor |
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| 10 | 2N7002 |
Unisonic Technologies |
N-CHANNEL POWER MOSFET |
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Desde 2024. D4U Semiconductor.
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