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| Part Number | 2N6281 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2N6281 |
| Manufacturer | INCHANGE |
| Title | Silicon NPN Power Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : VCEO=150V(Min) ·Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS ·Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNI T VCBO Collector-Base Voltage 180 V. |
| Features | age IC=20A; IB= 2A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 50A; IB= 10A VBE(sat)-1 Base-Emitter Saturation Voltage IC= 20A; IB= 2A VBE(sat)-2 Base-Emitter Saturation Voltage IC=50A; IB= 10A hFE-1 DC Current Gain IC=1A; VCE= 4V hFE-2 DC Current Gain IC=20A; VCE=4V hFE-3 DC Current Gain IC=50A; VCE= 4V MIN TYP. MAX UNIT 150 V 100 uA 50 uA 1.2 V 3 V 1.8 V 3.5 V. |
| Part Number | 2N6281 |
| Manufacturer | ETC |
| Title | HIGH-POWER NPN SILICON TRANSISTORS |
| Description | 2N 6278 thru 2N 6281 (SILICON) HIGH-POWER NPN SILICON TRANSISTORS designed for use in industrial-military power amplifier and switching circuit applications. • High Collector Emitter Sustaining Voltage VCEO(sus) = 100 Vdc (Min) - 2N6278 = 120 Vdc (Min) - 2N6279 = 140 Vdc (Min) - 2N6280 = 150 Vdc (M. |
| Features | . |
| Part Number | 2N6281 |
| Manufacturer | New Jersey Semi-Conductor |
| Title | NPN POWER TRANSISTORS |
| Description | . |
| Features | . |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2N6280 |
ETC |
HIGH-POWER NPN SILICON TRANSISTORS |
|
| 2 | 2N6280 |
INCHANGE |
Silicon NPN Power Transistor |
|
| 3 | 2N6280 |
New Jersey Semi-Conductor |
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|
| 4 | 2N6280 |
SSDI |
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|
| 5 | 2N6282 |
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|
| 6 | 2N6282 |
INCHANGE |
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|
| 7 | 2N6282 |
Motorola |
DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS |
|
| 8 | 2N6282 |
Savantic |
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|
| 9 | 2N6282 |
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|
| 10 | 2N6282 |
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(2N6282 - 2N6284) NPN Silicon Darlington Power Transistor |
|
Desde 2024. D4U Semiconductor.
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