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| Part Number | 2N6280 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2N6280 |
| Manufacturer | New Jersey Semi-Conductor |
| Title | NPN POWER TRANSISTORS |
| Description | . |
| Features | . |
| Part Number | 2N6280 |
| Manufacturer | SSDI |
| Title | NPN Transistor |
| Description | 40 AMP NPN Sorted by IC, then VCEO Part Number mIaCx (A) 2N5968 2N6033 40 40 mVCaExO (V) 100 120 Ratings based on 25˚C case temperature unless otherwise specified mhFiEn mhaFEx @Ic (A) VmCEa(sxat) (V) @(A)IC mfTin (MHz) mPaTx *TC=100°C (W) Package 30 120 Note 1 1.2 Note 1 Note 1 . |
| Features | . |
| Part Number | 2N6280 |
| Manufacturer | INCHANGE |
| Title | Silicon NPN Power Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : VCEO=140V(Min) ·Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS ·Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNI T VCBO Collector-Base Voltage 160 V. |
| Features | age IC=20A; IB= 2A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 50A; IB= 10A VBE(sat)-1 Base-Emitter Saturation Voltage IC= 20A; IB= 2A VBE(sat)-2 Base-Emitter Saturation Voltage IC=50A; IB= 10A hFE-1 DC Current Gain IC=1A; VCE= 4V hFE-2 DC Current Gain IC=20A; VCE=4V hFE-3 DC Current Gain IC=50A; VCE= 4V MIN TYP. MAX UNIT 140 V 100 uA 50 uA 1.2 V 3 V 1.8 V 3.5 V. |
similar datasheet
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Desde 2024. D4U Semiconductor.
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