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2N5366 |
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| Part Number | 2N5366 |
| Manufacturer | Fairchild Semiconductor |
| Description | 2N5366 2N5366 PNP General Purpose Amplifier • This device is designed for general purpose amplifiers applications at collector currents to 300mA. • Sourced from process 68. 1 TO-92 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCEO VCBO VEBO IC TJ, TSTG Parameter Collector-Emitter Voltage Collector-Base V. |
| Features | 50mA, IB = 2.5mA IC = 300mA, IB = 30mA VCE = 10V, IC = 2.0mA VCB = 10V, f = 1MHz VCB = 0.5V, f = 1MHz VCE = 10V, IC = 2.0mA, f = 1MHz 80 450 0.5 80 100 40 IC = 10mA Min. 40 40 4.0 100 100 10 300 0.25 1.0 1.1 2.0 0.8 8.0 35 V pF pF V Typ. Max. Units V V V nA nA µA VCE(sat) VBE(sat) VBE(on) Cob Cib hfe Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Output Capacitance Input Capacitance Small-Signal Current Gain Thermal Characteristics TA=25°C unless otherwise noted Symbol PD RθJA Parameter Total Device Dissipation Derate above 25°C Thermal R. |
| Datasheet |
 2N5366 Data Sheet
PDF 60.82KB |
| Distributor | Stock | Price | Buy |
|---|
2N5366 |
| Part Number | 2N5366 |
| Manufacturer | GE Solid State |
| Title | (2N5365 / 2N5366) SILICON TRANSISTORS |
| Description | . |
| Features | . |
2N5366 |
| Part Number | 2N5366 |
| Manufacturer | NTE |
| Title | Silicon PNP Transistor |
| Description | 2N5366 Silicon PNP Transistor Audio Power Amplifier TO−92 Type Package Absolute Maximum Ratings: (TC = +25C unless otherwise specified) Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Collector−Base Vol. |
| Features | tion Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200C/W Electrical Characteristics: (TC = +. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2N5360 |
National Semiconductor |
N-Channel JFETs |
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| 2 | 2N5360 |
ETC |
Silicon N-channel junction field-effect transistors |
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| 3 | 2N5361 |
National Semiconductor |
N-Channel JFETs |
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| 4 | 2N5361 |
ETC |
Silicon N-channel junction field-effect transistors |
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| 5 | 2N5362 |
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| 6 | 2N5362 |
ETC |
Silicon N-channel junction field-effect transistors |
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| 7 | 2N5363 |
National Semiconductor |
N-Channel JFETs |
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| 8 | 2N5363 |
ETC |
Silicon N-channel junction field-effect transistors |
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| 9 | 2N5364 |
National Semiconductor |
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| 10 | 2N5364 |
ETC |
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Desde 2024. D4U Semiconductor.
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