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2N5362 Silicon N-channel junction field-effect transistors

2N5362

2N5362
2N5362 2N5362
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Part Number 2N5362
Manufacturer ETC
Description 2N5358 (SILICON) thru 2N5364 Silicon N-channel junction field-effect transistors depletion mode (Type A) devices designed primarily for general-purpose amplifier applications. CASE 20 (TO-72) 102 3 4 STYLE 3 PIN 1. 2. 3. 4. DRAIN SOURCE GATE CASE LEAD MAXIMUM RATINGS Rating Forward Gate Current Reverse Gate-Source Voltage Drain-Gate Voltage Total Devic.
Features .
Datasheet Datasheet 2N5362 Data Sheet
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2N5362

National Semiconductor
2N5362
Part Number 2N5362
Manufacturer National Semiconductor
Title N-Channel JFETs
Description The 2N5361 thru 2N5364 series of N-channel JFETs is characterized for general purpose audio and RF amplifiers requiring tightly specified IdSS ranges. Absolute Maximum Ratings (25°o Gate-Drain or Gate-Source Voltage Gate Current Total Device Dissipation (25°C Free-Air Temperature) Power Derating .
Features S VDS = 0, VQS--20V T= 150°C 2N5361 MIN MAX -100 -100 2N5362 MIN MAX -100 -100 2N5363 MIN MAX 100 -100 2N5364 MIN MAX 100 -100 UNITS pA nA Gate-Source Cutoff VGS(off) .. . Voltage BVGSS Gate-Source Breakdown Voitage 'DSS Vqs Saturation Drain Current Gate-Source Voltage V DS = 15V, Id - 100 nA VdS'O, GI = -10jiA Vqs= 15V, Vqs= 0, (Note 1) Vqs- 15V, Id = (Note 2) -1.0 -6.0 2.0 -7.0 -2..


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