Distributor | Stock | Price | Buy |
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2N3440 |
Part Number | 2N3440 |
Manufacturer | CDIL |
Title | NPN HIGH VOLTAGE SILICON TRANSISTORS |
Description | SYMBOL 2N3439 Collector -Emitter Voltage VCEO 350 Collector -Base Voltage VCBO 450 Emitter -Base Voltage VEBO 7.0 Collector Current Continuous IC 1.0 Base Current IB 0.5 Power Dissipation@ Ta=25 degC PD 1.0 Derate Above 25 deg C 5.7 Power Dissipation@ Tc=25 degC PD 5.0 Derat. |
Features | . |
2N3440 |
Part Number | 2N3440 |
Manufacturer | ON Semiconductor |
Title | Low Power Transistor |
Description | 2N3440 Product Preview Low Power Transistor NPN Silicon Features • MIL−PRF−19500/368 Qualified • Available as JAN, JANTX, and JANTXV • Hermetically Sealed Commercial Product with Option for Military Temperature Range Screening MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Characteristic Symb. |
Features |
• MIL−PRF−19500/368 Qualified • Available as JAN, JANTX, and JANTXV • Hermetically Sealed Commercial Product with Option for Military Temperature Range Screening MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Characteristic Symbol Value Collector −Emitter Voltage VCEO 250 Collector −Base Voltage Emitter −Base Voltage VCBO VEBO 300 7.0 Collector Current − Continuous IC 1.0 Total Dev. |
2N3440 |
Part Number | 2N3440 |
Manufacturer | NTE |
Title | Silicon NPN Transistor |
Description | 2N3439 & 2N3440 Silicon NPN Transistor Power Amplifier & High Speed Switch TO−39 Type Package Absolute Maximum Ratings: (TC = +25C unless otherwise specified) Collector−Emitter Voltage, VCEO 2N3439 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
Features | . |
2N3440 |
Part Number | 2N3440 |
Manufacturer | STMicroelectronics |
Title | SILICON NPN TRANSISTORS |
Description | The 2N3439 and 2N3440 are silicon epitaxial planar NPN transistors in jedec TO-39 metal case designed for use in consumer and industrial line-operated applications. These devices are particularly suited as drivers in high-voltage low current inverters, switching and series regulators. TO-39 INTERN. |
Features | . |
2N3440 |
Part Number | 2N3440 |
Manufacturer | TT |
Title | HIGH VOLTAGE NPN TRANSISTORS |
Description | HIGH VOLTAGE NPN TRANSISTORS 2N3439 / 2N3440 Hermetic TO39 Package High Voltage Ideally suited for drivers in high voltage low current inverters, switching and series regulators High Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) Symbols Parame. |
Features | . |
2N3440 |
Part Number | 2N3440 |
Manufacturer | Central Semiconductor |
Title | SILICON NPN TRANSISTOR |
Description | The CENTRAL SEMICONDUCTOR 2N3439 and 2N3440 are silicon NPN transistors designed for consumer and industrial line-operated applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Curre. |
Features | (2N3439) 30 hFE VCE=10V, IC=20mA 40 fT VCE=10V, IC=10mA, f=5.0MHz 15 Cob VCB=10V, IE=0, f=1.0MHz Cib VEB=5.0V, IC=0, f=1.0MHz MAX 20 20 500 500 20 50 20 0.5 1.3 160 10 75 UNITS V V V A A W °C UNITS µA µA µA µA µA µA µA V V V V MHz pF pF R2 (25-November 2019) 2N3439 2N3440 SILICON NPN TRANSISTOR TO-39 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL . |
2N3440 |
Part Number | 2N3440 |
Manufacturer | Motorola |
Title | NPN Transistor |
Description | MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current —Collector Current Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Total Device Dissipation @ Ta = 50°C Derate above 50°C. |
Features | . |
2N3440 |
Part Number | 2N3440 |
Manufacturer | TRANSYS |
Title | NPN HIGH VOLTAGE SILICON TRANSISTORS |
Description | SYMBOL 2N3439 VCEO 350 Collector -Emitter Voltage VCBO 450 Collector -Base Voltage VEBO 7.0 Emitter -Base Voltage IC 1.0 Collector Current Continuous IB 0.5 Base Current PD 1.0 Power Dissipation@ Ta=25 degC 5.7 Derate Above 25 deg C PD 5.0 Power Dissipation@ Tc=25 degC 28.6 Derate Above 25 deg C Tj,. |
Features | E=1.5V IEBO VEB=6V, IC=0 Emitter-Cut off Current hFE* IC=2mA,VCE=10V DC Current Gain IC=20mA,VCE=10V IC=50mA,IB=4mA Collector Emitter Saturation Voltage VCE(Sat)* VBE(Sat) * IC=50mA,IB=4mA Base Emitter Saturation Voltage www.DataSheet.net/ 2N3440 250 300 UNITS V V V A A W mW/deg C W mW/deg C deg C deg C/W deg C/W 2N3439 >350 <20 <20 <500 <20 >30 40-160 <0.5 <1.3 2N3440 >250 <20 <50 <500 <20 40-. |
2N3440 |
Part Number | 2N3440 |
Manufacturer | Seme LAB |
Title | HIGH VOLTAGE NPN TRANSISTORS |
Description | 2N3439 2N3440 MECHANICAL DATA Dimensions in mm (inches) 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) HIGH VOLTAGE NPN TRANSISTORS FEATURES 4.19 (0.165) 4.95 (0.195) 12.70 (0.500) min. 0.89 max. (0.035) 7.75 (0.305) 8.51 (0.335) dia. • DUAL SILICON PLANAR EPITAXIAL NPN TRANSISTOR • HIGH VO. |
Features |
4.19 (0.165) 4.95 (0.195)
12.70 (0.500) min.
0.89 max. (0.035) 7.75 (0.305) 8.51 (0.335) dia.
• DUAL SILICON PLANAR EPITAXIAL NPN TRANSISTOR • HIGH VOLTAGE 5.08 (0.200) typ. APPLICATIONS: 2 1 0.66 (0.026) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 2.54 (0.100) 3 These devices are particularly suited as drivers in high-voltage low current inverters, switing and series regulators. 45˚ TO39 PAC. |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2N3440 |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
2 | 2N3440 |
Comset Semiconductor |
Transistor | |
3 | 2N3440CSM4R |
Seme LAB |
NPN TRANSISTOR | |
4 | 2N3440L |
Microsemi Corporation |
NPN LOW POWER SILICON TRANSISTOR | |
5 | 2N3441 |
Seme LAB |
MEDIUM POWER SILICON NPN TRANSISTOR | |
6 | 2N3441 |
Microsemi Corporation |
NPN POWER SILICON TRANSISTOR | |
7 | 2N3441 |
Inchange Semiconductor |
Silicon NPN Power Transistors | |
8 | 2N3441 |
Comset Semiconductor |
Silicon Power Transistor | |
9 | 2N3441 |
VPT |
NPN Silicon Power Transistor | |
10 | 2N3442 |
Motorola Inc |
10 AMPERE POWER TRANSISTOR |