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2N3440 NPN LOW POWER SILICON TRANSISTOR

2N3440


2N3440
Part Number 2N3440
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2N3440

CDIL
2N3440
Part Number 2N3440
Manufacturer CDIL
Title NPN HIGH VOLTAGE SILICON TRANSISTORS
Description SYMBOL 2N3439 Collector -Emitter Voltage VCEO 350 Collector -Base Voltage VCBO 450 Emitter -Base Voltage VEBO 7.0 Collector Current Continuous IC 1.0 Base Current IB 0.5 Power Dissipation@ Ta=25 degC PD 1.0 Derate Above 25 deg C 5.7 Power Dissipation@ Tc=25 degC PD 5.0 Derat.
Features .

2N3440

ON Semiconductor
2N3440
Part Number 2N3440
Manufacturer ON Semiconductor
Title Low Power Transistor
Description 2N3440 Product Preview Low Power Transistor NPN Silicon Features • MIL−PRF−19500/368 Qualified • Available as JAN, JANTX, and JANTXV • Hermetically Sealed Commercial Product with Option for Military Temperature Range Screening MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Characteristic Symb.
Features
• MIL−PRF−19500/368 Qualified
• Available as JAN, JANTX, and JANTXV
• Hermetically Sealed Commercial Product with Option for Military Temperature Range Screening MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Characteristic Symbol Value Collector −Emitter Voltage VCEO 250 Collector −Base Voltage Emitter −Base Voltage VCBO VEBO 300 7.0 Collector Current − Continuous IC 1.0 Total Dev.

2N3440

NTE
2N3440
Part Number 2N3440
Manufacturer NTE
Title Silicon NPN Transistor
Description 2N3439 & 2N3440 Silicon NPN Transistor Power Amplifier & High Speed Switch TO−39 Type Package Absolute Maximum Ratings: (TC = +25C unless otherwise specified) Collector−Emitter Voltage, VCEO 2N3439 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Features .

2N3440

STMicroelectronics
2N3440
Part Number 2N3440
Manufacturer STMicroelectronics
Title SILICON NPN TRANSISTORS
Description The 2N3439 and 2N3440 are silicon epitaxial planar NPN transistors in jedec TO-39 metal case designed for use in consumer and industrial line-operated applications. These devices are particularly suited as drivers in high-voltage low current inverters, switching and series regulators. TO-39 INTERN.
Features .

2N3440

TT
2N3440
Part Number 2N3440
Manufacturer TT
Title HIGH VOLTAGE NPN TRANSISTORS
Description HIGH VOLTAGE NPN TRANSISTORS 2N3439 / 2N3440 Hermetic TO39 Package High Voltage Ideally suited for drivers in high voltage low current inverters, switching and series regulators High Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) Symbols Parame.
Features .

2N3440

Central Semiconductor
2N3440
Part Number 2N3440
Manufacturer Central Semiconductor
Title SILICON NPN TRANSISTOR
Description The CENTRAL SEMICONDUCTOR 2N3439 and 2N3440 are silicon NPN transistors designed for consumer and industrial line-operated applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Curre.
Features (2N3439) 30 hFE VCE=10V, IC=20mA 40 fT VCE=10V, IC=10mA, f=5.0MHz 15 Cob VCB=10V, IE=0, f=1.0MHz Cib VEB=5.0V, IC=0, f=1.0MHz MAX 20 20 500 500 20 50 20 0.5 1.3 160 10 75 UNITS V V V A A W °C UNITS µA µA µA µA µA µA µA V V V V MHz pF pF R2 (25-November 2019) 2N3439 2N3440 SILICON NPN TRANSISTOR TO-39 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL .

2N3440

Motorola
2N3440
Part Number 2N3440
Manufacturer Motorola
Title NPN Transistor
Description MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current —Collector Current Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Total Device Dissipation @ Ta = 50°C Derate above 50°C.
Features .

2N3440

TRANSYS
2N3440
Part Number 2N3440
Manufacturer TRANSYS
Title NPN HIGH VOLTAGE SILICON TRANSISTORS
Description SYMBOL 2N3439 VCEO 350 Collector -Emitter Voltage VCBO 450 Collector -Base Voltage VEBO 7.0 Emitter -Base Voltage IC 1.0 Collector Current Continuous IB 0.5 Base Current PD 1.0 Power Dissipation@ Ta=25 degC 5.7 Derate Above 25 deg C PD 5.0 Power Dissipation@ Tc=25 degC 28.6 Derate Above 25 deg C Tj,.
Features E=1.5V IEBO VEB=6V, IC=0 Emitter-Cut off Current hFE* IC=2mA,VCE=10V DC Current Gain IC=20mA,VCE=10V IC=50mA,IB=4mA Collector Emitter Saturation Voltage VCE(Sat)* VBE(Sat) * IC=50mA,IB=4mA Base Emitter Saturation Voltage www.DataSheet.net/ 2N3440 250 300 UNITS V V V A A W mW/deg C W mW/deg C deg C deg C/W deg C/W 2N3439 >350 <20 <20 <500 <20 >30 40-160 <0.5 <1.3 2N3440 >250 <20 <50 <500 <20 40-.

2N3440

Seme LAB
2N3440
Part Number 2N3440
Manufacturer Seme LAB
Title HIGH VOLTAGE NPN TRANSISTORS
Description 2N3439 2N3440 MECHANICAL DATA Dimensions in mm (inches) 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) HIGH VOLTAGE NPN TRANSISTORS FEATURES 4.19 (0.165) 4.95 (0.195) 12.70 (0.500) min. 0.89 max. (0.035) 7.75 (0.305) 8.51 (0.335) dia. • DUAL SILICON PLANAR EPITAXIAL NPN TRANSISTOR • HIGH VO.
Features 4.19 (0.165) 4.95 (0.195) 12.70 (0.500) min. 0.89 max. (0.035) 7.75 (0.305) 8.51 (0.335) dia.
• DUAL SILICON PLANAR EPITAXIAL NPN TRANSISTOR
• HIGH VOLTAGE 5.08 (0.200) typ. APPLICATIONS: 2 1 0.66 (0.026) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 2.54 (0.100) 3 These devices are particularly suited as drivers in high-voltage low current inverters, switing and series regulators. 45˚ TO39 PAC.

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