Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
|---|
2N2221A |
| Part Number | 2N2221A |
| Manufacturer | Motorola |
| Title | NPN Transistor |
| Description | 2N2218I A, 2N2219I A 2N2221 I A{sILiCON) 2N2222,A, 2N5581 , 2N5582 NPN SILICON ANNULAR HERMETIC TRANSISTORS . . . widely used "Industry Standard" transistors for applications as medium-speed switches and as amplifiers from audio to VHF frequencies. • DC Current Gain Specified - 1.0 to 500 mAdc • Lo. |
| Features |
20
25
100/300
40
40/120
25
1001300
40
40/120
25
100/300
40
Package TO-5 TO-18 TO-46 TO-5 TO-18
*MAXIMUM RATINGS
Rating
Coliector ·Emitter Voltage Coliector ·Base Voltage Emitter ·Base Voltage Collector Current - Continuous Total Device Dissipation @TA =25°C Derate above 2SoC Total Device Dissipation @TC= 2SoC Derate above 250 e Operating and Storage Junction Temperature Range Symbol VeE. |
2N2221A |
| Part Number | 2N2221A |
| Manufacturer | Comset Semiconductor |
| Title | Switching Silicon Transistors |
| Description | NPN 2N2221 – 2N2221A 2N2222 – 2N2222A SWITCHING SILICON TRANSISTORS The 2N2221-A and 2N2222-A are NPN transistors mounted in TO-18 metal case . They are designed for high-speed switching applications and feature useful current gain over a wide range of collector current, low leakage currents and lo. |
| Features | useful current gain over a wide range of collector current, low leakage currents and low saturation voltages. Compliance to RoHS ABSOLUTE MAXIMUM RATINGS Value Symbol Ratings www.DataSheet.net/ 2N2221 2N2222 30 60 5 2N2221A 2N2222A 40 75 6 800 Unit VCEO VCBO VEBO IC PD Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Tamb = 25° Total Power Dissipation T. |
2N2221A |
| Part Number | 2N2221A |
| Manufacturer | TAITRON |
| Title | Small Signal General Purpose Transistors |
| Description | 2N2221A 2N2222A Marking Code 2N2221A 2N2222A VCEO Collector-Emitter Voltage 40 VCBO Collector-Base Voltage 75 VEBO Emitter-Base Voltage 6.0 IC Collector Current Continuous 800 Power Dissipation at TA=25°C PD Derate above 25°C 500 2.28 PD TJ ,TSTG Power Dissipation at TC=25°C Dera. |
| Features |
• Switching and Linear Application DC and VHF Amplifier Application • RoHS Compliant Mechanical Data Case: Terminals: Weight: TO-18, Metal can package Solderable per MIL-STD-202, Method 208 0.35 grams TO-18 Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description 2N2221A 2N2222A Marking Code 2N2221A 2N2222A VCEO Collector-Emitter Voltage 40 VCBO Collector-Base Vo. |
2N2221A |
| Part Number | 2N2221A |
| Manufacturer | MA-COM |
| Title | Radiation Hardened NPN Silicon Switching Transistors |
| Description | 2N2221A, L, UA, UB & 2N2222A, L, UA, UB Radiation Hardened NPN Silicon Switching Transistors Rev. V1 Features Qualified to MIL-PRF-19500/255 Levels JANSM-3K Rads (Si) JAN JANSD-10K Rads (Si) JANTX JANSP-30K Rads (Si) JANTXV JANSL-50K Rads (Si) JAN JANSR-100K Rads (Si) TO-18 (TO-206AA), Surf. |
| Features |
Qualified to MIL-PRF-19500/255 Levels JANSM-3K Rads (Si) JAN JANSD-10K Rads (Si) JANTX JANSP-30K Rads (Si) JANTXV JANSL-50K Rads (Si) JAN JANSR-100K Rads (Si) TO-18 (TO-206AA), Surface mount UA & UB Packages Applications Switching and Linear Applications DC and VHF Amplifier Applications Electrical Specifications @ TA = 25°C Parameter Test Conditions Symbol Units Minimum Maximum Of. |
2N2221A |
| Part Number | 2N2221A |
| Manufacturer | Microsemi |
| Title | NPN SILICON SWITCHING TRANSISTOR |
| Description | 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com TECHNICAL DATA SHEET NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/255 DEVICES 2N2221A 2N2221AL 2N2221AUA 2N2221AUB 2N2221AUBC * * Available to JANS quality le. |
| Features | s. 1. Derate linearly 3.08mW/°C above TA > +37.5°C 2. Derate linearly 4.76mW/°C above TA > +63.5°C Max. 325 210 325 Unit °C/W ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions OFF CHARACTERTICS Collector-Emitter Breakdown Voltage IC = 10mAdc Collector-Base Cutoff Current VCB = 75Vdc VCB = 60Vdc Emitter-Base Cutoff Current VEB = 6.0Vdc VEB = 4.0Vdc Col. |
2N2221A |
| Part Number | 2N2221A |
| Manufacturer | CDIL |
| Title | NPN SILICON PLANAR SWITCHING TRANSISTORS |
| Description | SYMBOL 2N2221A,22A Collector -Emitter Voltage VCEO 40 Collector -Base Voltage VCBO 75 Emitter -Base Voltage VEBO 6.0 Collector Current Continuous IC 800 Power Dissipation @Ta=25 degC PD 500 Derate Above 25deg C 2.28 @ Tc=25 degC PD 1.2 Derate Above 25deg C 6.85 Operating And. |
| Features | ration Voltage Base Emitter Saturation Voltage Ta=150 deg C VCB=60V, IE=0 - 10 ICEX VCE=60V, VEB=3V - 10 IEBO VEB=3V, IC=0 - 10 IBL VCE=60V, VEB=3V - 20 VCE(Sat)* IC=150mA,IB=15mA - 0.3 IC=500mA,IB=50mA 1.0 VBE(Sat) * IC=150mA,IB=15mA - 0.6-1.2 IC=500mA,IB=50mA - 2.0 UNIT V V V mA mW mW/deg C W mW/deg C deg C UNIT V V V nA uA nA nA nA V V V V Continental Device India Limit. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2N2221 |
ART CHIP |
Ultra-Fast Transient Response LDO Regulator |
|
| 2 | 2N2221 |
Motorola |
NPN Transistor |
|
| 3 | 2N2221 |
CDIL |
NPN SILICON PLANAR SWITCHING TRANSISTORS |
|
| 4 | 2N2221 |
STMicroelectronics |
Silicon Planar Epitaxial NPN transistor |
|
| 5 | 2N2221 |
Comset Semiconductor |
Switching Silicon Transistors |
|
| 6 | 2N2221 |
Central |
SILICON NPN TRANSISTORS |
|
| 7 | 2N2221 |
Seme LAB |
Bipolar NPN Device |
|
| 8 | 2N2221AL |
Microsemi |
NPN SILICON SWITCHING TRANSISTOR |
|
| 9 | 2N2221AUA |
Microsemi |
NPN SILICON SWITCHING TRANSISTOR |
|
| 10 | 2N2221AUB |
Microsemi |
NPN SILICON SWITCHING TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
|