Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
|---|
2N2221 |
| Part Number | 2N2221 |
| Manufacturer | STMicroelectronics |
| Title | Silicon Planar Epitaxial NPN transistor |
| Description | The 2N2218, 2N2219, 2N2221 and 2N2222 are silicon planar epitaxial NPN transistors in Jedec TO-39 (for 2N2218 and 2N2219) and in Jedec TO-18 (for 2N2221 and 2N2222) metal cases. They are designed for high-speed switching applications at collector currents up to 500 mA, and feature useful current gai. |
| Features | useful current gain over a wide range of collector current, low leakage currents and low saturation voltages. 2N2218/2N2219 approved to CECC 50002100, 2N2221/2N2222 approved to CECC 50002-101 available on request. TO-39 TO-18 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC Pt o t Parameter Collector-base Voltage (I E = 0) Collector-emitter Voltage (I B = 0) Emitt. |
2N2221 |
| Part Number | 2N2221 |
| Manufacturer | CDIL |
| Title | NPN SILICON PLANAR SWITCHING TRANSISTORS |
| Description | SYMBOL 2N2221, 22 VCEO Collector Emitter Voltage 30 VCBO Collector Base Voltage 60 Emitter Base Voltage Collector Current Continuous Power Dissipation @Ta=25ºC Derate Above 25ºC Power Dissipation @ Tc=25ºC Derate Above 25ºC Operating and Storage Junction Temperature Range VEBO IC PD PD Tj, Tstg 5 80. |
| Features | 0 60 5V 10 10 0.4 1.6 1.3 2.6 UNIT V V nA µA V V V V Collector Emitter Saturation Voltage Base Emitter Saturation Voltage VCB=50V, IE=0 Ta=150 º C VCE(Sat)*I C=150mA,IB=15mA IC=500mA,IB=50mA VBE(Sat)*I C=150mA,IB=15mA IC=500mA,IB=50mA 0.6 Continental Device India Limited Data Sheet Page 1 of 4 http://www.Datasheet4U.com NPN SILICON PLANAR SWITCHING TRANSISTORS 2N2221 2N2222 TO-18 Metal C. |
2N2221 |
| Part Number | 2N2221 |
| Manufacturer | Comset Semiconductor |
| Title | Switching Silicon Transistors |
| Description | NPN 2N2221 – 2N2221A 2N2222 – 2N2222A SWITCHING SILICON TRANSISTORS The 2N2221-A and 2N2222-A are NPN transistors mounted in TO-18 metal case . They are designed for high-speed switching applications and feature useful current gain over a wide range of collector current, low leakage currents and lo. |
| Features | useful current gain over a wide range of collector current, low leakage currents and low saturation voltages. Compliance to RoHS ABSOLUTE MAXIMUM RATINGS Value Symbol Ratings www.DataSheet.net/ 2N2221 2N2222 30 60 5 2N2221A 2N2222A 40 75 6 800 Unit VCEO VCBO VEBO IC PD Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Tamb = 25° Total Power Dissipation T. |
2N2221 |
| Part Number | 2N2221 |
| Manufacturer | Seme LAB |
| Title | Bipolar NPN Device |
| Description | 2N2221 Dimensions in mm (inches). 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 0.48 (0.019) 0.41 (0.016) dia. 2.54 (0.100) Nom. 31 2 1 – Emitter TO18 (TO206AA) PINOUTS 2 – Base 3 – Collector Bipolar NPN Device. VCEO = 30. |
| Features | ions discovered in its use. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Generated 2-Aug-02 . |
2N2221 |
| Part Number | 2N2221 |
| Manufacturer | ART CHIP |
| Title | Ultra-Fast Transient Response LDO Regulator |
| Description | 2N2220/2N2221/2N2222 300/600mA, Ultra-Fast Transient Response LDO Regulator 2N2220,2N2221,and 2N2222 are epitaxial NPN silicon planar transistors in TO 18 case (18 A 3 DIN 41876). The collector is electrically connected to the case. The transistors are particularly suitable for use as high-speed sw. |
| Features | . |
2N2221 |
| Part Number | 2N2221 |
| Manufacturer | Central |
| Title | SILICON NPN TRANSISTORS |
| Description | The CENTRAL SEMICONDUCTOR 2N2221 and 2N2222 are silicon NPN epitaxial planar transistors designed for small signal, general purpose switching applications. MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continu. |
| Features | f=100MHz 250 Cob VCB=10V, IE=0, f=100kHz - Cib VEB=0.5V, IC=0, f=100kHz - MAX 10 10 10 0.4 1.6 1.3 2.6 8.0 30 UNITS V V V mA mW W °C °C/W °C/W UNITS nA μA nA V V V V V V V MHz pF pF R2 (24-July 2013) 2N2221 2N2222 SILICON NPN TRANSISTORS ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted) 2N2221 2N2222 SYMBOL TEST CONDITIONS MIN MAX MIN MAX hFE VCE=10V, IC=0.1m. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2N222 |
Motorola |
Amplifier Transistors |
|
| 2 | 2N2220 |
ART CHIP |
Ultra-Fast Transient Response LDO Regulator |
|
| 3 | 2N2220 |
Siemens Group |
NPN Silicon Planar Transistors |
|
| 4 | 2N2221A |
TAITRON |
Small Signal General Purpose Transistors |
|
| 5 | 2N2221A |
MA-COM |
Radiation Hardened NPN Silicon Switching Transistors |
|
| 6 | 2N2221A |
Motorola |
NPN Transistor |
|
| 7 | 2N2221A |
Central |
NPN SILICON TRANSISTOR |
|
| 8 | 2N2221A |
Microsemi |
NPN SILICON SWITCHING TRANSISTOR |
|
| 9 | 2N2221A |
CDIL |
NPN SILICON PLANAR SWITCHING TRANSISTORS |
|
| 10 | 2N2221A |
Comset Semiconductor |
Switching Silicon Transistors |
|
Desde 2024. D4U Semiconductor.
|