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2N120CND |
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| Part Number | 2N120CND |
| Manufacturer | Intersil Corporation |
| Description | HGTP2N120CND, HGT1S2N120CNDS Data Sheet January 2000 File Number 4681.2 13A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes The HGTP2N120CND and HGT1S2N120CNDS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar trans. |
| Features |
of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT used is the development type TA49313. The Diode used is the development type TA49056 (Part number RHRD4120). The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49311.
Features
• 13A, 1200V, TC = 25oC • 1200V Switching SO. |
| Datasheet |
 2N120CND Data Sheet
PDF 129.85KB |
| Distributor | Stock | Price | Buy |
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| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2N120 |
UTC |
1200V N-CHANNEL POWER MOSFET |
|
| 2 | 2N120-E4 |
UTC |
1200V N-CHANNEL POWER MOSFET |
|
| 3 | 2N1204 |
Motorola |
PNP Transistor |
|
| 4 | 2N1204A |
Motorola |
PNP Transistor |
|
| 5 | 2N1209 |
SSDI |
NPN Transistor |
|
| 6 | 2N12 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 7 | 2N1212 |
SSDI |
NPN Transistor |
|
| 8 | 2N123 |
ETC |
PNP Transistor |
|
| 9 | 2N1008 |
Motorola |
PNP germanium transistor |
|
| 10 | 2N1008A |
Motorola |
PNP germanium transistor |
|
Desde 2024. D4U Semiconductor.
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