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2N120-E4 |
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| Part Number | 2N120-E4 |
| Manufacturer | UTC |
| Description | The UTC 2N120-E4 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES0 * RDS(ON) ≤ 10 Ω @ VGS=10V, ID=1.0A * Low Reverse Transfer Capacitance * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness SY. |
| Features |
* RDS(ON) ≤ 10 Ω @ VGS=10V, ID=1.0A * Low Reverse Transfer Capacitance * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness SYMBOL Power MOSFET ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2N120L-TF1-T 2N120G-TF1-T 2N120L-TF2-T 2N120G-TF2-T 2N120L-TN3-R 2N120G-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220F1 TO-220F2 TO-252 Pin Assignment 1 2 3 G D S G D S G D S Packing Tube Tube Tape Reel MARKING www.unisonic.com.tw Copyright © 2024 Unisonic Technologies Co., Ltd 1 of 8 Q. |
| Datasheet |
 2N120-E4 Data Sheet
PDF 660.00KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2N120 |
UTC |
1200V N-CHANNEL POWER MOSFET |
|
| 2 | 2N1204 |
Motorola |
PNP Transistor |
|
| 3 | 2N1204A |
Motorola |
PNP Transistor |
|
| 4 | 2N1209 |
SSDI |
NPN Transistor |
|
| 5 | 2N120CND |
Intersil Corporation |
N-Channel IGBT |
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| 6 | 2N12 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
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| 7 | 2N1212 |
SSDI |
NPN Transistor |
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| 8 | 2N123 |
ETC |
PNP Transistor |
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| 9 | 2N1008 |
Motorola |
PNP germanium transistor |
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| 10 | 2N1008A |
Motorola |
PNP germanium transistor |
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Desde 2024. D4U Semiconductor.
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