logo

1SS385FV Silicon Diode Datasheet


1SS385FV

Toshiba
1SS385FV
Part Number 1SS385FV
Manufacturer Toshiba (https://www.toshiba.com/)
Title DIODE SCHOTTKY 10V 100MA VESM
Description TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS385FV 1SS385FV High-Speed Switching Applications z Low forward voltage: VF = 0.23 V (ty...
Features ntly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and ind...

Document Datasheet 1SS385FV datasheet pdf (225.77KB)
Distributor Distributor
DigiKey
Availability In Stock: 7982
Price
200000 units: 0.02293 USD
56000 units: 0.02646 USD
24000 units: 0.02946 USD
16000 units: 0.02999 USD
8000 units: 0.03616 USD
2000 units: 0.03899 USD
1000 units: 0.04498 USD
500 units: 0.06474 USD
100 units: 0.0776 USD
10 units: 0.159 USD
1 units: 0.23 USD
BuyNow BuyNow Buy Now (Manufacturer a Toshiba America Electronic Components 1SS385FV,L3F)



1SS385F

Toshiba Semiconductor
1SS385F
Part Number 1SS385F
Manufacturer Toshiba Semiconductor
Title Diode
Description TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS385F High Speed Switching 1SS385F Unit in mm Low forward voltage: VF = 0.23V (typ.) @IF.
Features ew) Marking 961001EAA2
• TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of .

Document 1SS385F datasheet pdf



logo    Since 2024. D4U Semiconductor.   |   Contact Us   |   Privacy Policy