Busque con el número de pieza junto con el fabricante o la descripción
1SS385FV |
Click to view a larger image
| Part Number | 1SS385FV |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS385FV 1SS385FV High-Speed Switching Applications z Low forward voltage: VF = 0.23 V (typ.) @IF = 5 mA z Ultra-small package Absolute Maximum ... |
| Features |
ntly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: Unit rating. Total rating = unit rating × 1.5
** : Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mmt)
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current Total capaci... |
| Document |
 1SS385FV Data Sheet
PDF 225.77KB |
Similar Datasheet
Desde 2024. D4U Semiconductor.
|