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| Part Number | 1N6513 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 1N6513 |
| Manufacturer | VMI |
| Title | Spice Model |
| Description | www.DataSheet4U.com Spice Model 1N6513 Electrical Characteristics and Maximum Ratings Part Working Number Reverse Voltage (Vrwm) Average Rectified Current (Io) Reverse Current @ Vrwm (Ir) Forward Voltage 1 Cycle Repetitive Reverse Surge Surge Recovery Current Current Time tp=8.3ms (3) (Ifsm) (Ifr. |
| Features | apacitance Bulk junction potential Grading coefficient Energy-band gap Temperature coefficient Flicker-noise coefficient Flicker-noise exponent Coefficient for capacitance Diode breakdown voltage Diode breakdown current Value 5.0E-07 7.2 25 0.14 70 56.64 1.67 0.5 1.11 3 0 1 0.5 2200 100 Units Amps C Ohm nS pF Volts Volts Volts uAmps Dimensions: In. (mm) * All temperatures are ambient unless . |
| Part Number | 1N6513 |
| Manufacturer | Digitron Semiconductors |
| Title | 0.5A - 2.0A RECTIFIERS |
| Description | 1N6513, 1N6515, 1N6517, 1N6519 High-reliability discrete products and engineering services since 1977 0.5A – 2.0A RECTIFIERS FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), stand. |
| Features |
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. 2,000V to 10,000V working reverse voltage 70ns recovery time Operating temperature range = -65° to +175°C Storage temperature range = -65 to +200°C ELECTRICAL CHARACTERSITICS (TA = 25°C . |
| Part Number | 1N6513 |
| Manufacturer | HVGT |
| Title | Ultra-Fast Recovery High Voltage Silicon Rectifying Diode |
| Description | 1N6513 2.0A 2.0kV 70nS Ultra-Fast Recovery High Voltage Silicon Rectifying Diode ----------------------------------------------------------------------------------------------------------------------------- ------- Introduce: Reference Shape: HVGT high voltage silicon rectifier diodes is made . |
| Features | High reliability design. GPP chip. High frequency, super fast recovery. Conform to RoHS and SGS. Epoxy resin molded in vacuumHave anticorrosion in the surface. Applications: HVGT Name: Unit: (mm) High voltage multiplier circuit. DO-590 X-ray power supply. Lead Diameter 1.28±0.03 General purpose high voltage rectifier. Other. Mechanical Data: Case: epoxy resin molding. Terminal: welding. |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 1N6510 |
Microsemi |
Isolated Diode Array |
|
| 2 | 1N6510 |
SENSITRON SEMICONDUCTOR |
Isolated Diode Array |
|
| 3 | 1N6511 |
Microsemi |
Isolated Diode Array |
|
| 4 | 1N6512 |
SSDI |
ULTRA FAST RECOVERY HIGH VOLTAGE RECTIFIER |
|
| 5 | 1N6512SMS |
SSDI |
ULTRA FAST RECOVERY HIGH VOLTAGE RECTIFIER |
|
| 6 | 1N6513SMS |
SSDI |
ULTRA FAST RECOVERY HIGH VOLTAGE RECTIFIER |
|
| 7 | 1N6513U |
ETC |
Rectifiers |
|
| 8 | 1N6514 |
SSDI |
ULTRA FAST RECOVERY HIGH VOLTAGE RECTIFIER |
|
| 9 | 1N6514SMS |
SSDI |
ULTRA FAST RECOVERY HIGH VOLTAGE RECTIFIER |
|
| 10 | 1N6515 |
ETC |
Rectifiers |
|
Desde 2024. D4U Semiconductor.
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