1N6513 |
Part Number | 1N6513 |
Manufacturer | HVGT |
Description | 1N6513 2.0A 2.0kV 70nS Ultra-Fast Recovery High Voltage Silicon Rectifying Diode --------------------------------------------------------------------------------------------------------------------... |
Features |
High reliability design. GPP chip. High frequency, super fast recovery. Conform to RoHS and SGS. Epoxy resin molded in vacuumHave anticorrosion in
the surface.
Applications:
HVGT Name:
Unit: (mm)
High voltage multiplier circuit.
DO-590
X-ray power supply.
Lead Diameter 1.28±0.03
General purpose high voltage rectifier.
Other.
Mechanical Data:
Case: epoxy resin molding. Terminal: welding axis. Net weight: 2.1 grams (approx).
29.0 (min)
9.0 (±0.5)
Maximum Ratings And Characteristics: (Absolute Maximum Ratings)
29.0 (min)
5.0 (±0.2)
Items
Symbols
Condition
Data Value Units
Re... |
Document |
1N6513 Data Sheet
PDF 438.73KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 1N6510 |
Microsemi |
Isolated Diode Array | |
2 | 1N6510 |
SENSITRON SEMICONDUCTOR |
Isolated Diode Array | |
3 | 1N6511 |
Microsemi |
Isolated Diode Array | |
4 | 1N6512 |
SSDI |
ULTRA FAST RECOVERY HIGH VOLTAGE RECTIFIER | |
5 | 1N6512SMS |
SSDI |
ULTRA FAST RECOVERY HIGH VOLTAGE RECTIFIER | |
6 | 1N6513 |
SSDI |
ULTRA FAST RECOVERY HIGH VOLTAGE RECTIFIER |