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| Part Number | 1N6263 |
| Distributor | Stock | Price | Buy |
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| Part Number | 1N6263 |
| Manufacturer | Digitron Semiconductors |
| Title | SCHOTTKY RECTIFIERS |
| Description | 1N5711, 1N5712 & 1N6263 High-reliability discrete products and engineering services since 1977 SCHOTTKY RECTIFIERS FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and a. |
| Features |
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Parameter Peak Inverse Voltage 1N5711 1N6263 Power Dissipation (Infinite Heatsink) Maximum Single Cycle Surge 10 μs Square Wave Thermal Resistance Junction to Ambient Air J. |
| Part Number | 1N6263 |
| Manufacturer | DACO |
| Title | SMALL SIGNAL SCHOTTKY DIODES |
| Description | FEAT URES 1N5711 THUR 1N6263 SMALL SIGNAL SCHOTTKY DIODES DO-35 MECH AN ICAL DAT A Case: Polarity: Weight: ABSOLUT E RAT IN GS(LIMI T IN G VALU ES) ELE CT RICAL CH ARACTER IST ICS 1 RATINFS AND CHARACTERISTICS CURVES 1N5711 THUR 1N6263 Fig.1 Typical variation of fwd. curr ent vs for war d. vol. |
| Features | . |
| Part Number | 1N6263 |
| Manufacturer | BLUECOLOUR |
| Title | SILICON SCHOTTKY BARRIER DIODES |
| Description | SD101A (1N6263)...SD101C SILICON SCHOTTKY BARRIER DIODES for general purpose applications The SD101 Series is a metal on silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steer. |
| Features | . |
| Part Number | 1N6263 |
| Manufacturer | EDCON |
| Title | Schottky Barrier Diode |
| Description | 1N5711 / 1N6263 Schottky Barrier Diode Features 1. For general purpose applications. 2. Metal-on-silicon schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupli. |
| Features | 1. For general purpose applications. 2. Metal-on-silicon schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications. 3. This diode is also available in the Mini MELF case with type designation LL5711 and . |
| Part Number | 1N6263 |
| Manufacturer | Diodes Incorporated |
| Title | SCHOTTKY BARRIER SWITCHING DIODE |
| Description | 1N6263 SCHOTTKY BARRIER SWITCHING DIODE Features · · · · Low Forward Voltage Drop Guard Ring Construction for Transient Protection Fast Switching Time Low Reverse Capacitance A B A Mechanical Data · · · · · Case: DO-35, Glass Leads: Solderable per MIL-STD-202, Method 208 Marking: Type Number Pola. |
| Features |
· · · · Low Forward Voltage Drop Guard Ring Construction for Transient Protection Fast Switching Time Low Reverse Capacitance A B A Mechanical Data · · · · · Case: DO-35, Glass Leads: Solderable per MIL-STD-202, Method 208 Marking: Type Number Polarity: Cathode Band Weight: 0.13 grams (approx.) Dim A B C D D DO-35 Min 25.40 ¾ ¾ ¾ Max ¾ 4.00 0.60 2.00 C All Dimensions in mm Maximum Ratings . |
| Part Number | 1N6263 |
| Manufacturer | Galaxy Semi-Conductor Holdings |
| Title | SMALL SIGNAL SCHOTTKY DIODE |
| Description | BL GALAXY ELECTRICAL SMALL SIGNAL SCHOTTKY DIODE FEATURES For general purpose applications Metal silicon schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices,steering,biasing and coupling d. |
| Features | For general purpose applications Metal silicon schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices,steering,biasing and coupling diodes for www.DataSheet4U.com 1N6263 VOLTAGE RANGE: 60 V POWER DISSIPATION:400 mW DO - 35(GLASS) fast switching and low logic level applications MECHANICA. |
| Part Number | 1N6263 |
| Manufacturer | MCC |
| Title | 400 mWatt Small Signal Schottky Diode |
| Description | MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# 1N6263 1N5711 Features • Moisture Sensitivity: Level 1 per J-STD-020C • High Reverse Breakdown Voltage • Low Forward Voltage Drop • For General . |
| Features |
• Moisture Sensitivity: Level 1 per J-STD-020C • High Reverse Breakdown Voltage • Low Forward Voltage Drop • For General Purpose Application • Marking : Cathode band and type number • Lead Free Finish/Rohs Compliant (Note1) ("P"Suffix designates Compliant. See ordering information) 400 mWatt Small Signal Schottky Diode 60 to 70 Volts Maximum Ratings • Operating Temperature: -55°C to +150°C • St. |
| Part Number | 1N6263 |
| Manufacturer | Vishay |
| Title | Schottky Diodes |
| Description | VISHAY Schottky Diodes 1N5711 / 1N6263 Vishay Semiconductors Features • For general purpose applications • Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering,. |
| Features |
• For general purpose applications • Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications. • This diode is also available in the MiniMELF case with type designation LL5711 and LL626. |
| Part Number | 1N6263 |
| Manufacturer | CENPAK |
| Title | Small Signal Schottky Barrier Diode |
| Description | CENPAK ELECTRONICS Features 1. For general purpose applications 2. Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make i t ideal for protection of MOS devices, steering, biasing and coupling diodes for fast swi. |
| Features | 1. For general purpose applications 2. Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make i t ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications. Mechanical Data Case: DO-35 Glass Case Terminals: Plated axial leads, solderable per MI. |
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| 1 | 1N6263 |
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Desde 2024. D4U Semiconductor.
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