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| Part Number | 1N5711 |
| Distributor | Stock | Price | Buy |
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| Part Number | 1N5711 |
| Manufacturer | Micro Commercial Components |
| Title | Schottky Barrier Switching Diode |
| Description | MCC Features l l l l Fast Switching Speed omponents 21201 Itasca Street Chatsworth !"# $ % !"# 1N5711 High Reverse Breakdown Voltage Low Forward Voltage Drop For General Purpose Application Schottky Barrier Switching Diode Mechanical. |
| Features | l l l l Fast Switching Speed omponents 21201 Itasca Street Chatsworth !"# $ % !"# 1N5711 High Reverse Breakdown Voltage Low Forward Voltage Drop For General Purpose Application Schottky Barrier Switching Diode Mechanical Data l Case: DO-35, Glass l Terminals: Solderable per MIL-STD-202, Method 208 l Polarity: Indicated by Cathode B. |
| Part Number | 1N5711 |
| Manufacturer | Microsemi Corporation |
| Title | SCHOTTKY BARRIER DIODES |
| Description | • 1N5711-1 AVAILABLE IN JAN, PER MIL-PRF-19500/444 • 1N5712-1 AVAILABLE IN JAN, PER MIL-PRF-19500/444 • SCHOTTKY BARRIER DIODES • HERMETICALLY SEALED • METALLURGICALLY BONDED JANTX, JANTXV AND JANS JANTX, JANTXV AND JANS 1N5711 1N5711-1 1N5712-1 1N6857-1 1N6858-1 DSB2810 DSB5712 MAXIMUM RATINGS O. |
| Features | 0.75@35 0.65@15 I @V R R VOLTS 15 50 16 16 16 50 C PICO FARADS 2.0 2.0 2.0 2.0 4.5 4.5 1 1 1 1 2 2 T ESDS CLASS nA 100 200 150 150 150 200 FIGURE 1 DESIGN DATA CASE: Hermetically sealed glass case per MIL-PRF-19500/444 and /445 DO-35 Outline LEAD MATERIAL: Copper clad steel. LEAD FINISH: Tin / Lead THERMAL RESISTANCE: (ROJEC): 250 °C/W maximum at L = .375 inch THERMAL IMPEDANCE: (ZOJX): 40 °C/. |
| Part Number | 1N5711 |
| Manufacturer | Vishay |
| Title | Schottky Diodes |
| Description | VISHAY Schottky Diodes 1N5711 / 1N6263 Vishay Semiconductors Features • For general purpose applications • Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering,. |
| Features |
• For general purpose applications • Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications. • This diode is also available in the MiniMELF case with type designation LL5711 and LL626. |
| Part Number | 1N5711 |
| Manufacturer | STMicroelectronics |
| Title | SMALL SIGNAL SCHOTTKY DIODE |
| Description | Metal to silicon junction diode featuring high breakdown, low turn-on voltage and ultrafast switching. Primarly intended for high level UHF/VHF detection and pulse application with broad dynamic range. Matched batches are available on request. ABSOLUTE RATINGS (limiting values) Symbol VRRM IF Ptot T. |
| Features | τ Tamb = 25°C Tamb = 25°C Test Conditions VR = 0V IF = 5mA f = 1MHz Krakauer Method Min. Typ. Max. 2 100 Unit pF ps * On infinite heatsink with 4mm lead length ** Pulse test: tp ≤ 300µs δ < 2%. Matched batches available on request. Test conditions (forward voltage and/or capacitance) according to customer specification. August 1999 Ed: 1A 1/3 1N 5711 Figure 1. Forward current versus forward v. |
| Part Number | 1N5711 |
| Manufacturer | Diodes Incorporated |
| Title | SCHOTTKY BARRIER SWITCHING DIODE |
| Description | 1N5711 SCHOTTKY BARRIER SWITCHING DIODE Features · · · · Ultra-Fast Switching Speed High Reverse Breakdown Voltage Low Forward Voltage Drop Guard Ring Junction Protection A B A Mechanical Data · · · · · Case: DO-35, Glass Leads: Solderable per MIL-STD-202, Method 208 Marking: Type Number Polarity. |
| Features |
· · · · Ultra-Fast Switching Speed High Reverse Breakdown Voltage Low Forward Voltage Drop Guard Ring Junction Protection A B A Mechanical Data · · · · · Case: DO-35, Glass Leads: Solderable per MIL-STD-202, Method 208 Marking: Type Number Polarity: Cathode Band Weight: 0.13 grams (approx.) Dim A B C D D DO-35 Min 25.40 ¾ ¾ ¾ Max ¾ 4.00 0.60 2.00 C All Dimensions in mm Maximum Ratings @ TA. |
| Part Number | 1N5711 |
| Manufacturer | Digitron Semiconductors |
| Title | SCHOTTKY RECTIFIERS |
| Description | 1N5711, 1N5712 & 1N6263 High-reliability discrete products and engineering services since 1977 SCHOTTKY RECTIFIERS FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and a. |
| Features |
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Parameter Peak Inverse Voltage 1N5711 1N6263 Power Dissipation (Infinite Heatsink) Maximum Single Cycle Surge 10 μs Square Wave Thermal Resistance Junction to Ambient Air J. |
| Part Number | 1N5711 |
| Manufacturer | Agilent |
| Title | Schottky Barrier Diodes |
| Description | Applications The 1N5711, 1N5712, 5082-2800/ 10/11 are passivated Schottky barrier diodes which use a patented “guard ring” design to achieve a high breakdown voltage. Packaged in a low cost glass package, they are well suited for high level detecting, mixing, switching, gating, log or A-D converting. |
| Features |
• Low Turn-On Voltage As Low as 0.34 V at 1 mA • Pico Second Switching Speed • High Breakdown Voltage Up to 70 V • Matched Characteristics Available Description/Applications The 1N5711, 1N5712, 5082-2800/ 10/11 are passivated Schottky barrier diodes which use a patented “guard ring” design to achieve a high breakdown voltage. Packaged in a low cost glass package, they are well suited for high leve. |
| Part Number | 1N5711 |
| Manufacturer | Compensated Deuices Incorporated |
| Title | SCHOTTKY BARRIER DIODES |
| Description | • 1N5711-1 AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/444 • 1N5712-1 AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/445 • SCHOTTKY BARRIER DIODES • HERMETICALLY SEALED • METALLURGICALLY BONDED 1N5711 1N5711-1 1N5712-1 1N6857-1 1N6858-1 DSB2810 DSB5712 MAXIMUM RATINGS Op. |
| Features | 0.75@35 0.65@15 I @V R R VOLTS 15 50 16 16 16 50 C T PICO FARADS 2.0 2.0 2.0 2.0 4.5 4.5 1 1 1 1 2 2 ESDS CLASS nA 100 200 150 150 150 200 FIGURE 1 DESIGN DATA CASE: Hermetically sealed glass case per MIL-PRF-19500/444 and /445 DO-35 Outline LEAD MATERIAL: Copper clad steel. LEAD FINISH: Tin / Lead THERMAL RESISTANCE: (ROJEC): 250 ˚C/W maximum at L = .375 inch THERMAL IMPEDANCE: (ZOJX): 40 ˚C/W. |
| Part Number | 1N5711 |
| Manufacturer | M-Pulse Microwave |
| Title | General Purpose Schottky Diodes |
| Description | General Purpose Schottky Diodes FEATURES Fast switching-PSEC High breakdown voltage Low cost - H-P equivalents ENVIRONMENTAL RATINGS (Maximum) Operating Temperature. - - - - - - - -65°C to+200°C Storage Temperature - - - - - - - - - -65°C to+200°C Power Dissipation @ 25°C - - - - - - 100mWDerate Li. |
| Features | Fast switching-PSEC High breakdown voltage Low cost - H-P equivalents ENVIRONMENTAL RATINGS (Maximum) Operating Temperature. - - - - - - - -65°C to+200°C Storage Temperature - - - - - - - - - -65°C to+200°C Power Dissipation @ 25°C - - - - - - 100mWDerate Linearly to zero at150°C Soldering Temperature - - - - - 230°C for 5 seconds G1 105 *(Optional Package) C1 C21 Electrical Specifications @ 25. |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 1N5711 |
EIC |
SCHOTTKY BARRIER DIODES |
|
| 2 | 1N5711 |
JINAN JINGHENG ELECTRONICS |
SMALL SIGNAL SCHOTTKY DIODES |
|
| 3 | 1N5711 |
DACO |
SMALL SIGNAL SCHOTTKY DIODES |
|
| 4 | 1N5711 |
GOOD-ARK |
Small-Signal Diode |
|
| 5 | 1N5711 |
EDCON |
Schottky Barrier Diode |
|
| 6 | 1N5711 |
CENPAK |
Small Signal Schottky Barrier Diode |
|
| 7 | 1N5711 |
MA-COM |
General Purpose Axial Lead Glass Packaged Schottky Diodes |
|
| 8 | 1N5711 |
LGE |
Small Signal Schottky Diodes |
|
| 9 | 1N5711 |
Silicon Supplies |
Small-signal ultra-fast switching schottky diode |
|
| 10 | 1N5711-1 |
Compensated Deuices Incorporated |
SCHOTTKY BARRIER DIODES |
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Desde 2024. D4U Semiconductor.
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