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13N50CF |
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| Part Number | 13N50CF |
| Manufacturer | Fairchild Semiconductor |
| Description | This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power. |
| Features |
• 13 A, 500 V, RDS(on) = 540 mΩ (Max.) @ VGS = 10 V, ID = 6.5 A • Low Gate Charge (Typ. 43 nC) • Low Crss (Typ. 20 pF) • 100% Avalanche Tested • Fast Recovery Body Diode (Typ. 100 ns) Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (. |
| Datasheet |
 13N50CF Data Sheet
PDF 428.74KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 13N50C |
Fairchild Semiconductor |
500V N-Channel MOSFET |
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| 2 | 13N50 |
Unisonic Technologies |
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| 3 | 13N50DM2 |
STMicroelectronics |
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| 4 | 13N50H |
KIA |
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| 5 | 13N50K |
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| 6 | 13N03LA |
Infineon Technologies |
IPD13N03LA |
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| 7 | 13N06L |
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| 8 | 13N10 |
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| 9 | 13N10 |
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| 10 | 13N120-E2 |
UTC |
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Desde 2024. D4U Semiconductor.
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