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13N50K N-CHANNEL POWER MOSFET Datasheet


13N50K

Unisonic Technologies
13N50K

Part Number 13N50K
Manufacturer Unisonic Technologies
Description The UTC 13N50K is an N-Channel enhancement mode power MOSFET. The device adopts planar stripe and uses DMOS technology to minimize and provide low...
Features * RDS(ON) <0.48Ω @VGS = 10V * Ultra low gate charge (typical 39nC ) * Low reverse transfer Capacitance ( CRSS = typical 20pF ) * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness  SYMBOL 1 TO-220F2  ORDERING INFORMATION Ordering Number Lead Free ...

Document Datasheet 13N50K datasheet pdf (207.95KB)



13N50H

KIA
13N50H
Part Number 13N50H
Manufacturer KIA
Title N-CHANNEL MOSFET
Description The KIA13N50H N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as h.
Features „ RDS(on)=0.48Ω @ VGS=10V „ Low gate charge ( typical 43nC) „ Fast switching capability „ Avalanche energy specified „ Improved dv/dt capability 3. Pin configuration Pin 1 2 3 4 1 of 5 Function Gate Drain Source Drain KIA SEMICONDUCTORS 13Amps,500V N-CHANNEL MOSFET 13N50H 4. Absolute maximum r.

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13N50DM2

STMicroelectronics
13N50DM2
Part Number 13N50DM2
Manufacturer STMicroelectronics
Title N-channel Power MOSFET
Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fastrecovery diode series. It offers very low recovery charge (Qrr) and time (t.
Features Order code STD13N50DM2AG VDS 500 V RDS(on ) max. 360 mΩ ID 11 A
• AEC-Q101 qualified
• Fast-recovery body diode
• Extremely low gate charge and input capacitance
• Low on-resistance
• 100% avalanche tested
• Extremely high dv/dt ruggedness
• Zener-protected Applications
• Switching applications.

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13N50CF

Fairchild Semiconductor
13N50CF
Part Number 13N50CF
Manufacturer Fairchild Semiconductor
Title N-Channel MOSFET
Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advan.
Features
• 13 A, 500 V, RDS(on) = 540 mΩ (Max.) @ VGS = 10 V, ID = 6.5 A
• Low Gate Charge (Typ. 43 nC)
• Low Crss (Typ. 20 pF)
• 100% Avalanche Tested
• Fast Recovery Body Diode (Typ. 100 ns) Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary pl.

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13N50C

Fairchild Semiconductor
13N50C
Part Number 13N50C
Manufacturer Fairchild Semiconductor
Title 500V N-Channel MOSFET
Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This a.
Features





• 13A, 500V, RDS(on) = 0.48Ω @VGS = 10 V Low gate charge ( typical 43nC) Low Crss ( typical 20pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S D2-PAK FQB Series I2-PAK G D S FQI Series G! ! " " " ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS E.

Document 13N50C datasheet pdf





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