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UPD5741T6J |
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| Part Number | UPD5741T6J |
| Manufacturer | Renesas (https://www.renesas.com/) |
| Description | The μPD5741T6J is a silicon MOS monolithic integrated circuit designed as high gain impedance converter for electret condenser microphone. This device exhibits low noise and high voltage gain characte... |
| Features |
• Low Noise : NV = −101 dBV TYP. @ VDD = 2 V, Cin = 3 pF, RL = 2.2 kΩ : NV = −102 dBV TYP. @ VDD = 2 V, Cin = 5 pF, RL = 2.2 kΩ • High Gain : GV = +6.5 dB TYP. @ VDD = 2 V, Cin = 3 pF, RL = 2.2 kΩ : GV = +8.5 dB TYP. @ VDD = 2 V, Cin = 5 pF, RL = 2.2 kΩ • Low Consumption Current : IDD = 250 μA TYP. @ VDD = 2 V, RL = 2.2 kΩ • Built-in the capacitor for RF noise immunity • High ESD voltage • 3-pin thin-type lead-less minimold (1.2 × 1.0 × 0.33 mm) APPLICATIONS • Microphone, Sensor, etc. ORDERING INFORMATION Part Number Order Number Package μPD5741T6J-E4 μPD5741T6J-E4-A 3-pin th... |
| Document |
 UPD5741T6J Data Sheet
PDF 115.77KB |
Similar Datasheet
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Desde 2024. D4U Semiconductor.
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