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| Part Number | UPD5710TK |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | UPD5710TK |
| Manufacturer | NEC |
| Title | WIDE BAND SPDT SWITCH |
| Description | The µPD5710TK is a CMOS MMIC for wide band SPDT (Single Pole Double Throw) switch which were developed for mobile communications, wireless communications and another general-purpose RF switching application. This device can operate frequency from DC to 2.5 GHz, having the low insertion loss and high. |
| Features |
• Supply voltage : VDD = 1.8 to 3.3 V (2.8 V TYP.) • Switch control voltage : Vcont (H) = 1.8 to 3.3 V (2.8 V TYP.) : Vcont (L) = −0.2 to +0.2 V (0 V TYP.) • Low insertion loss : Lins1 = 0.6 dB TYP. @ f = DC to 1.0 GHz, VDD = 2.8 V, Vcont (H) = 2.8 V, Vcont (L) = 0 V : Lins2 = 0.8 dB TYP. @ f = 1.0 to 2.0 GHz, VDD = 2.8 V, Vcont (H) = 2.8 V, Vcont (L) = 0 V : Lins3 = 0.95 dB TYP. @ f = 2.. |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | UPD5713TK |
CEL |
WIDE BAND SPDT SWITCH |
|
| 2 | UPD5713TK |
Renesas |
WIDE BAND SPDT SWITCH |
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| 3 | UPD5715GR |
NEC |
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|
| 4 | UPD5716GR |
NEC |
CMOS MMIC 4 x 2 IF SWITCH MATRIX |
|
| 5 | UPD5702TU |
CEL |
Si LD MOS POWER AMPLIFIER |
|
| 6 | UPD5702TU |
NEC |
3V OPERATION SILICON LDMOSFET RF POWER AMPLIFIER INTEGRATED CIRCUIT |
|
| 7 | UPD5738T6N |
NEC |
WIDE BAND DPDT SWITCH |
|
| 8 | UPD5739T7A |
Renesas |
SiGe CMOS |
|
| 9 | UPD5741T6J |
Renesas |
LOW NOISE AND HIGH GAIN AMPLIFIER |
|
| 10 | UPD5742T6J |
Renesas |
LOW NOISE AND HIGH GAIN AMPLIFIER |
|
Desde 2024. D4U Semiconductor.
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