1SS154 Toshiba Semiconductor Silicon Epitaxial Schottky Barrier Type Diode Datasheet. existencias, precio

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1SS154

Toshiba Semiconductor
1SS154
1SS154 1SS154
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Part Number 1SS154
Manufacturer Toshiba (https://www.toshiba.com/) Semiconductor
Description TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS154 1SS154 UHF~S Band Mixer/Detector Applications • Small package. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating U...
Features verse voltage Reverse current Forward voltage Forward voltage Total capacitance Symbol VR IR VF (1) VF (2) CT Test Condition IR = 10 μA VR = 5 V IF = 0.1 mA IF = 10 mA VR = 0, f = 1 MHz Marking Unit: mm JEDEC ― JEITA SC-59 TOSHIBA 1-3G1A Weight: 12 mg (typ.) Min Typ. Max Unit 6 ⎯ ⎯ V ⎯ ⎯ 0.5 μA ⎯ ⎯ 0.35 V ⎯ 0.5 ⎯ V ⎯ 0.8 ⎯ pF Start of commercial production 1981-01 1 2014-03-01 1SS154 2 2014-03-01 1SS154 RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the ...

Document Datasheet 1SS154 Data Sheet
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