Busque con el número de pieza junto con el fabricante o la descripción
| Part Number | 1SS15C1 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 1SS15C1 |
| Manufacturer | ETC |
| Title | (1SS15x1) Schottky Rectifier |
| Description | SUN RISE ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diode 1SS15A1 / 1SS15B1 / 1SS15C1 SCHOTTKY RECTIFIER Features · · · Low Forward Voltage Drop Guard Ring Construction for Transient Protection High Conductance SOD-123 2.70 1.6 Unit:mm Maximum Ratings @ TA = 25°C unless otherw. |
| Features |
· · · Low Forward Voltage Drop Guard Ring Construction for Transient Protection High Conductance SOD-123 2.70 1.6 Unit:mm Maximum Ratings @ TA = 25°C unless otherwise specified Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current @T L = 100°C Non-Repetitive Peak Forward Surge Current 8.3ms single ha. |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 1SS154 |
Toshiba Semiconductor |
Silicon Epitaxial Schottky Barrier Type Diode |
|
| 2 | 1SS15A1 |
ETC |
(1SS15x1) Schottky Rectifier |
|
| 3 | 1SS15B1 |
ETC |
(1SS15x1) Schottky Rectifier |
|
| 4 | 1SS101 |
XIN SEMICONDUCTOR |
SUPER HIGH SPEED SWITCHING DIODE |
|
| 5 | 1SS101 |
NEC |
Mixer Diode |
|
| 6 | 1SS104 |
Toshiba Semiconductor |
SILICON DIODE |
|
| 7 | 1SS106 |
Hitachi Semiconductor |
Silicon Schottky Barrier Diode |
|
| 8 | 1SS106 |
SEMTECH |
SILICON SCHOTTKY BARRIER DIODE |
|
| 9 | 1SS106 |
Renesas |
Silicon Schottky Barrier Diode |
|
| 10 | 1SS106 |
JINAN JINGHENG ELECTRONICS |
SMALL SIGNAL SCHOTTKY DIODES |
|
Desde 2024. D4U Semiconductor.
|