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EMB20N03V |
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| Part Number | EMB20N03V |
| Manufacturer | Excelliance MOS |
| Description | N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V RDSON (MAX.) 20mΩ ID 12A N‐Channel MOSFET UIS, Rg 100% Tested Pb‐Free Lead Plating & Halogen Free A... |
| Features |
to 150
UNIT V A
mJ W W °C
MAXIMUM 6 50
UNIT °C / W
p.1
EMB20N03V
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNIT
MIN TYP MAX
STATIC
Drain‐Source Breakdown Voltage Gate Threshold Voltage Gate‐Body Leakage Zero Gate Voltage Drain Current
On‐State Drain Current1 Drain‐Source On‐State Resistance1
Forward Transconductance1
V(BR)DSS VGS(th) IGSS IDSS
ID(ON) RDS(ON)
gfs
VGS = 0V, ID = 250A VDS = VGS, ID = 250A VDS = 0V, VGS = ±20V VDS = 24V, VGS = 0V VDS = 20V, VGS = 0V, TJ = 125 °C VDS = 10V, VGS = 10V
VGS = 10V, ID = 8A... |
| Document |
 EMB20N03V Data Sheet
PDF 849.89KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | EMB20N03A |
Excelliance MOS |
MOSFET |
|
| 2 | EMB20N03G |
Excelliance MOS |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 3 | EMB20N03Q |
Excelliance MOS |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 4 | EMB20N03VAA |
Excelliance MOS |
MOSFET |
|
| 5 | EMB20N03VAT |
Excelliance MOS |
MOSFET |
|
| 6 | EMB20N03VL |
Excelliance MOS |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
Desde 2024. D4U Semiconductor.
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