logo

EMB20N03VL N-Channel Logic Level Enhancement Mode Field Effect Transistor Datasheet


EMB20N03VL

Excelliance MOS
EMB20N03VL

Part Number EMB20N03VL
Manufacturer Excelliance MOS
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V RDSON (MAX.) @VGS=10V RDSON (MAX.) @VGS=4.5V 20mΩ 3...
Features d by maximum junction temperature. 2Duty cycle  1% 350°C / W when mounted on a 1 in2 pad of 2 oz copper. 6 °C / W 50 ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS Drain‐Source Breakdown Voltage Gate Threshold Voltage Gate‐Body Leakage Zero Ga...

Document Datasheet EMB20N03VL datasheet pdf (839.13KB)



EMB20N03VAT

Excelliance MOS
EMB20N03VAT
Part Number EMB20N03VAT
Manufacturer Excelliance MOS
Title MOSFET
Description EMB20N03VAT N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 20mΩ ID 7A G UIS, .
Features 2015/7/9 p.1 EMB20N03VAT ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain‐Source Breakdown Voltage Gate Threshold Voltage Gate‐Body Leakage Zero Gate Voltage Drain Current On‐State Drain Current1 Drain‐Sou.

Document EMB20N03VAT datasheet pdf


EMB20N03VAA

Excelliance MOS
EMB20N03VAA
Part Number EMB20N03VAA
Manufacturer Excelliance MOS
Title MOSFET
Description EMB20N03VAA N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 20mΩ ID 7A G UIS, .
Features 2013/08/15 p.1 EMB20N03VAA ELECTRICAL CHARACTERISTICS (TA = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain‐Source Breakdown Voltage Gate Threshold Voltage Gate‐Body Leakage Zero Gate Voltage Drain Current On‐State Drain Current1 Drain.

Document EMB20N03VAA datasheet pdf


EMB20N03V

Excelliance MOS
EMB20N03V
Part Number EMB20N03V
Manufacturer Excelliance MOS
Title N-Channel MOSFET
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V RDSON (MAX.) 20mΩ ID 12A N‐Channel MOSFET UIS, .
Features to 150 UNIT V A mJ W W °C MAXIMUM 6 50 UNIT °C / W p.1 EMB20N03V ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain‐Source Breakdown Voltage Gate Threshold Voltage Gate‐Body Leakage Zero Gate Voltage Dr.

Document EMB20N03V datasheet pdf



logo    Since 2024. D4U Semiconductor.   |   Contact Us   |   Privacy Policy