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MTB30N06VL |
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| Part Number | MTB30N06VL |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | MTB30N06VL Preferred Device Power MOSFET 30 Amps, 60 Volts, Logic Level N−Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low ... |
| Features |
VGSM
ID ID IDM PD
60 Vdc 60 Vdc
± 15 Vdc ± 20 Vpk 30 Adc 20 105 Apk 90 Watts 0.6 W/°C 3.0 Watts
Operating and Storage Temperature Range
TJ, Tstg
− 55 to 175
°C
Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 25 Vdc, VGS = 5 Vdc, Peak IL = 30 Apk, L = 0.342 mH, RG = 25 Ω)
EAS
154 mJ
Thermal Resistance − Junction to Case − Junction to Ambient − Junction to Ambient (Note 1.)
RθJC RθJA RθJA
°C/W 1.67 62.5 50
Maximum Lead Temperature for Soldering Purposes, 1/8″ from Case for 10 seconds
TL
260 °C
1. When surface mounted to an FR4 board using the minimum reco... |
| Document |
 MTB30N06VL Data Sheet
PDF 255.40KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MTB30N06VL |
Motorola |
TMOS POWER FET |
|
| 2 | MTB30N06EL |
Motorola Semiconductor |
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| 3 | MTB30N06ELT4 |
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TMOS Power FET |
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| 4 | MTB30P06V |
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|
| 5 | MTB30P06V |
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Power MOSFET |
|
| 6 | MTB33N10E |
Motorola |
TMOS POWER FET |
|
Desde 2024. D4U Semiconductor.
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