IRF7303QPBF |
Part Number | IRF7303QPBF |
Manufacturer | International Rectifier |
Description | These HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFET'... |
Features |
of these HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. The efficient SO-8 package provides enhanced thermal characteristics and dual MOSFET die capability making it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel.
PD - 96103A
IRF7303QPbF
HEXFET® Power MOSFET
S1 1 G1 2
8 D1 7 D1
VDSS = 3... |
Document |
IRF7303QPBF Data Sheet
PDF 235.82KB |
Similar Datasheet
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