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23NM50N |
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| Part Number | 23NM50N |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | These devices are made using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s ... |
| Features |
Order codes
STB23NM50N STF23NM50N STP23NM50N STW23NM50N
VDSS (@Tjmax)
550 V
RDS(on) max.
< 0.19 Ω
ID 17 A
■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Application Switching applications Description These devices are made using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. 3 2 1 TO-220FP 3 2 1 TO-220 3 2... |
| Document |
 23NM50N Data Sheet
PDF 422.67KB |
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Desde 2024. D4U Semiconductor.
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