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IRF3710LPBF |
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| Part Number | IRF3710LPBF |
| Manufacturer | International Rectifier |
| Description | Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switchi... |
| Features |
W in a typical surface mount application. The through-hole version (IRF3710L) is available for low-profile applications.
D2Pak
TO-262
IRF3710SPbF IRF3710LPbF
Absolute Maximum Ratings
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C
VGS IAR EAR dv/dt TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
... |
| Document |
 IRF3710LPBF Data Sheet
PDF 315.12KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRF3710L |
International Rectifier |
Power MOSFET |
|
| 2 | IRF3710L |
INCHANGE |
N-Channel MOSFET |
|
| 3 | IRF3710 |
nELL |
N-Channel Power MOSFET |
|
| 4 | IRF3710 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 5 | IRF3710 |
International Rectifier |
Power MOSFET |
|
| 6 | IRF3710PbF |
International Rectifier |
HEXFET Power MOSFET |
|
Desde 2024. D4U Semiconductor.
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