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IRF7420PbF |
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| Part Number | IRF7420PbF |
| Manufacturer | International Rectifier |
| Description | These P-Channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing S 1 techniques to achieve the extremely low on-resistance S 2 per silicon area. This benefit provide... |
| Features |
ID @ TA = 25°C ID @ TA= 70°C IDM PD @TA = 25°C PD @TA = 70°C
VGS TJ, TSTG
Parameter Drain- Source Voltage
Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max. -12 -11.5 -9.2 -46 2.5 1.6 20 ±8 -55 to +150
Units V
A
W mW/°C
V °C
Thermal Resistance
RθJA
www.irf.com
Parameter Maximum Junction-to-Ambient
Max. 50
Units °C/W
1
8/25/06
IRF7420PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Pa... |
| Document |
 IRF7420PbF Data Sheet
PDF 150.95KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRF7420PBF-1 |
International Rectifier |
HEXFET Power MOSFET |
|
| 2 | IRF7420 |
International Rectifier |
HEXFET Power MOSFET |
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| 3 | IRF742 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
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| 4 | IRF742 |
Fairchild Semiconductor |
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| 5 | IRF742 |
ART CHIP |
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| 6 | IRF742 |
GE |
FIELD EFFECT POWER TRANSISTOR |
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Desde 2024. D4U Semiconductor.
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