Busque con el número de pieza junto con el fabricante o la descripción
IRLR024ZPbF |
Click to view a larger image
| Part Number | IRLR024ZPbF |
| Manufacturer | International Rectifier |
| Description | This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperatur... |
| Features |
n Logic Level n Advanced Process Technology n Ultra Low On-Resistance n 175°C Operating Temperature n Fast Switching n Repetitive Avalanche Allowed up to Tjmax n Lead-Free
G
Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
PD - 95773B
IRL... |
| Document |
 IRLR024ZPbF Data Sheet
PDF 331.10KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRLR024Z |
International Rectifier |
Power MOSFET |
|
| 2 | IRLR024 |
International Rectifier |
(IRLU/R024) Power MOSFET |
|
| 3 | IRLR024 |
Samsung Electronics |
N-Channel MOSFET |
|
| 4 | IRLR024 |
Vishay |
Power MOSFET |
|
| 5 | IRLR024N |
International Rectifier |
Power MOSFET |
|
| 6 | IRLR024N |
INCHANGE |
N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
|