PMZB290UN |
Part Number | PMZB290UN |
Manufacturer | NXP (https://www.nxp.com/) Semiconductors |
Description | N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and b... |
Features |
Fast switching Trench MOSFET technology Low threshold voltage Ultra thin package profile with 0.37 mm height 1.3 Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source on-state resistance Conditions Tj = 25 °C VGS = 4.5 V; Tamb = 25 °C VGS = 4.5 V; ID = 200 mA; Tj = 25 °C [1] Min Typ Max Unit - - 20 V -8 - 8V - - 1A - 290 350 mΩ [1] Device mounted on... |
Document |
PMZB290UN Data Sheet
PDF 295.15KB |
Similar Datasheet
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