NCE2008E |
Part Number | NCE2008E |
Manufacturer | NCE Power Semiconductor |
Description | The NCE2008E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM a... |
Features |
● VDS = 20V,ID =6A RDS(ON) < 30mΩ @ VGS=2.5V RDS(ON) < 24mΩ @ VGS=4.5V ESD Rating: 2000V HBM ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Schematic diagram Marking and pin assignment Application ● PWM application ● Load switch TSSOP-8 top view Package Marking and Ordering Information Device Marking Device Device Package 2008E NCE2008E TSSOP-8 Reel Size Ø330mm Tape width 12mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drai... |
Document |
NCE2008E Data Sheet
PDF 319.41KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | NCE2003 |
NCE Power Semiconductor |
N & P-Channel Enhancement Mode Power MOSFET | |
2 | NCE2004NE |
NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET | |
3 | NCE2006NE |
NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET | |
4 | NCE2007N |
NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET | |
5 | NCE2010E |
NCE Power Semiconductor |
NCE N-Channel Enhancement Mode Power MOSFET | |
6 | NCE2011E |
NCE Power Semiconductor |
NCE N-Channel Enhancement Mode Power MOSFET |