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RF1S30N06LE |
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| Part Number | RF1S30N06LE |
| Manufacturer | Harris |
| Description | The RFP30N06LE, RF1S30N06LE and RF1S30N06LESM are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gi... |
| Features |
• 30A, 60V • rDS(ON) = 0.047Ω • 2kV ESD Protected • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve • UIS Rating Curve Description The RFP30N06LE, RF1S30N06LE and RF1S30N06LESM are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directl... |
| Document |
 RF1S30N06LE Data Sheet
PDF 90.96KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | RF1S30N06LE |
Fairchild Semiconductor |
30A/ 60V/ ESD Rated/ Avalanche Rated/ Logic Level N-Channel Enhancement-Mode Power MOSFETs |
|
| 2 | RF1S30N06LESM |
Fairchild Semiconductor |
30A 60V ESD Rated/ Avalanche Rated / Logic Level N-Channel Enhancement-Mode Power MOSFETs |
|
| 3 | RF1S30N06LESM |
Intersil Corporation |
30A/ 60V/ ESD Rated/ 0.047 Ohm/ Logic Level N-Channel Power MOSFETs |
|
| 4 | RF1S30N06LESM |
Harris |
N-Channel Enhancement-Mode Power MOSFETs |
|
| 5 | RF1S30P05 |
Harris |
P-Channel Enhancement-Mode Power MOSFET |
|
| 6 | RF1S30P05SM |
Intersil Corporation |
30A/ 50V/ 0.065 Ohm/ P-Channel Power MOSFETs |
|
Desde 2024. D4U Semiconductor.
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