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| Part Number | RF1S30P05SM |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | RF1S30P05SM |
| Manufacturer | Harris |
| Title | P-Channel Enhancement-Mode Power MOSFET |
| Description | The RFG30P05, RFP30P05, RF1S30P05, and RF1S30P05SM P-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in a. |
| Features |
• 30A, 50V • rDS(ON) = 0.065Ω • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve • UIS Rating Curve • +175oC Operating Temperature Description The RFG30P05, RFP30P05, RF1S30P05, and RF1S30P05SM P-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits gives optimum utilization of silicon,. |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | RF1S30P05 |
Harris |
P-Channel Enhancement-Mode Power MOSFET |
|
| 2 | RF1S30P06 |
Intersil Corporation |
30A/ 60V/ 0.065 Ohm/ P-Channel Power MOSFETs |
|
| 3 | RF1S30P06SM |
Intersil Corporation |
30A/ 60V/ 0.065 Ohm/ P-Channel Power MOSFETs |
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| 4 | RF1S30N06LE |
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30A/ 60V/ ESD Rated/ Avalanche Rated/ Logic Level N-Channel Enhancement-Mode Power MOSFETs |
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| 5 | RF1S30N06LE |
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| 6 | RF1S30N06LESM |
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| 7 | RF1S30N06LESM |
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| 8 | RF1S30N06LESM |
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| 9 | RF1S22N10SM |
Fairchild Semiconductor |
22A/ 100V/ 0.080 Ohm/ N-Channel Power MOSFETs |
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| 10 | RF1S22N10SM |
Intersil Corporation |
22A/ 100V/ 0.080 Ohm/ N-Channel Power MOSFETs |
|
Desde 2024. D4U Semiconductor.
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